Datasheet > HIS165

HIS165

更新时间： 2024-09-24 19:50:43

品牌	Logo	应用领域
HUTSON		局域网
页数	文件大小	规格书
1页	41K
描述
Silicon Controlled Rectifier, TO-218

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HIS165 技术参数

生命周期：	Contact Manufacturer	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.30.00.80	风险等级：	5.75
JEDEC-95代码：	TO-218	JESD-30 代码：	R-PSFM-T3
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
触发设备类型：	SCR	Base Number Matches：	1

HIS165 数据手册

MAXIMUM RATINGS

SYMBOL VDRM

DEVICE NUMBERS

UNITS

100

200

400

600

HIS025

HIS040

HIS140

HIS240

HIS440

HIS640

HIS065

HIS125

HIS225

HIS425

HIS625

HIS165

HIS265

HIS465

HIS665

Repetitive Peak Off-State Voltage (1)

Gate open, and Tj = 110° C

VDRM

VOLT

RMS On-State Current at TC = 80 ° C

and Conduction Angle of 360°

Peak Surge (Non-Repetitive) On-State

Current, One-Cycle, at 50Hz or 60 Hz

It(RMS)

ITSM

AMP

250

400

650

Peak Gate-Trigger Current for 3µsec. Max.

Peak Gate-Power Dissipation at IGT < IGTM

Average Gate-Power Dissipation

IGTM

PGM

AMP

WATT

°C

0.5

PG(AV)

Tstg

0.5

Storage Temperature Range

-40 to +150

-40 to +110

Operating Temperature Range, Tj

Toper

°C

ELECTRICAL CHARACTERISTICS

At Specified Case Temperatures

Peak Off-State Current, Gate Open

TC = 110° C VDRM &VRRM = Max. Rating

Maximum On-State Voltage, (PEAK) at

TC=25°C, and IT = Rated Amps

DC Holding Current, Gate Open

and TC = 25°C

Critical Rate-Of-Rise of Off-State Voltage,

Gate Open, TC = 110°C

DC Gate – Trigger Current for Anode Voltage

= 12VDC, RL = 60W and at TC = 25° C

DC Gate-Trigger Voltage for Anode Voltage =

12VDC, RL = 60W and at TC = 25°C

Gate-Controlled Turn-on Time for

t D + t R, IGT = 150mA and TC = 25°C

MAX.

VOLT

MAX

IDRM

VTM

IHO

0.5

1.6

100

200

0.5

1.8

100

200

0.5

1.8

100

200

MAX.

Critical

dv/dt

V/µsec.

MAX.

VOLT

MAX

IGT

VGT

Tgt

2.5

µsec.

°C/WATT

TYP

Thermal Resistance, Junction-to-Case

1.1

0.95

1.0

RqJ-C

*All Hutson Isolated TO-218 devices are UL Recognized.

UL number E95589 (N)

Note: Add “E” Suffix for Eyelet Leads

SOLID STATE CONTROL DEVICES

中文翻译

下载PDF

与HIS165相关器件

型号	品牌	获取价格	描述	数据表
HIS1X11	AUK	获取价格	IC Socket, SIP11, 11 Contact(s), 1.778mm Term Pitch, Solder
HIS1X15	AUK	获取价格	IC Socket, SIP15, 15 Contact(s), 1.778mm Term Pitch, Solder
HIS240	HUTSON	获取价格	Silicon Controlled Rectifier, 40A I(T)RMS, 40000mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme
HIS265	HUTSON	获取价格	Silicon Controlled Rectifier, TO-218
HIS465	HUTSON	获取价格	Silicon Controlled Rectifier, TO-218
HIS625	HUTSON	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 600V V(DRM), 600V V(RRM), 1 Eleme
HIS640	HUTSON	获取价格	Silicon Controlled Rectifier, 40A I(T)RMS, 40000mA I(T), 600V V(DRM), 600V V(RRM), 1 Eleme
HIS665	HUTSON	获取价格	Silicon Controlled Rectifier, TO-218
HISO	ETC	获取价格	HISO
HISP10-1X02G	AUK	获取价格	IC Socket, SIP2, 2 Contact(s), 1.778mm Term Pitch, Solder