Datasheet > HIRP3010Q20-B30

HIRP3010Q20-B30

更新时间： 2024-11-12 01:25:39

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HIRP3010Q20-B30 数据手册

HIRP3010Q20-B30

SMD Type 850nm Infrared Emitter

Features

Description

The HIRP3010Q20-B30 is a GaAlAs infrared LED

housed in a miniature SMD package. The device

has a peak wavelength of 850nm LED spectrally

matched with phototransistor or photodiode.



Small double-end package

Viewing Angle at X axis (Note3) = 65⁰

High reliability

Good spectral matching to Si photo detector

RoHS compliance

Applications



Infrared sensor

Light barrier

Infrared Touch Panel Solutions

Package Outline

Schematic

Anode

Cathode

CT Micro

Rev 0(Preliminary)

Proprietary & Confidential

Page 1

May, 2014

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
HIRP3216Q18-C0	CTMICRO	获取价格	SMD Type 850nm Infrared Emitter
HIRTS-1	ETC	获取价格
HIS Series	MERITEK	获取价格	HIS Series \| Signal Inductor Multilayer Ceramic Type
HIS025	HUTSON	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element
HIS040	HUTSON	获取价格	Silicon Controlled Rectifier, 40A I(T)RMS, 40000mA I(T), 50V V(DRM), 50V V(RRM), 1 Element
HIS0642	AUK	获取价格	IC Socket, DIP42, 42 Contact(s), 1.778mm Term Pitch, 0.6inch Row Spacing, Solder
HIS065	HUTSON	获取价格	Silicon Controlled Rectifier, TO-218
HIS125	HUTSON	获取价格	Silicon Controlled Rectifier, 25A I(T)RMS, 25000mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme
HIS140	HUTSON	获取价格	Silicon Controlled Rectifier, 40A I(T)RMS, 40000mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme
HIS165	HUTSON	获取价格	Silicon Controlled Rectifier, TO-218