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HIRF830 PDF预览

HIRF830

更新时间: 2024-11-11 03:41:55
品牌 Logo 应用领域
HSMC /
页数 文件大小 规格书
4页 49K
描述
N-CHANNEL POWER MOSFET

HIRF830 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

HIRF830 数据手册

 浏览型号HIRF830的Datasheet PDF文件第2页浏览型号HIRF830的Datasheet PDF文件第3页浏览型号HIRF830的Datasheet PDF文件第4页 
Spec. No. : MOS200407  
Issued Date : 2004.10.01  
Revised Date : 2005.04.22  
Page No. : 1/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HIRF830 Series Pin Assignment  
HIRF830 / HIRF830F  
Tab  
N-CHANNEL POWER MOSFET  
3-Lead Plastic TO-220AB  
Package Code: E  
Pin 1: Gate  
Pin 2 & Tab: Drain  
Pin 3: Source  
Description  
This N - Channel MOSFETs provide the designer with the best  
combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
3
2
1
Features  
3-Lead Plastic TO-220FP  
Package Code: F  
Pin 1: Gate  
Pin 2: Drain  
Pin 3: Source  
Dynamic dv/dt Rating  
Repetitive Avalanche Rated  
Fast Switching  
Ease of Paralleling  
Simple Drive Requirements  
3
2
1
Thermal Characteristics  
HIRF830 Series Symbol  
D
Symbol  
Parameter  
Value  
TO-220AB  
TO-220FP  
Units  
1.71  
3.3  
Thermal Resistance  
Junction to Case Max.  
RθJC  
°C/W  
G
Thermal Resistance  
Junction to Ambient Max.  
S
62  
RθJA  
°C/W  
Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
500  
4.5  
Units  
VDSS  
ID  
Drain-Source Voltage  
V
A
A
V
Drain to Current (Continuous)  
Drain to Current (Pulsed) (*1)  
Gate-to-Source Voltage (Continue)  
Total Power Dissipation  
TO-220AB  
IDM  
18  
VGS  
±20  
74  
38  
W
TO-220FP  
PD  
Derate above 25°C  
0.59  
TO-220AB  
W/°C  
0.3  
TO-220FP  
EAS  
IAR  
Single Pulse Avalanche Energy (*2)  
Avalanche Current (*1)  
Repetitive Avalanche Energy (*1)  
Peak Diode Recovery (*3)  
Operating Temperature Range  
250  
mJ  
A
9
7.4  
EAR  
dv/dt  
Tj  
mJ  
V/ns  
°C  
5
-55 to 150  
-55 to 150  
Tstg  
Storage Temperature Range  
°C  
Maximum Lead Temperature for Soldering Purposes, 1/8” from  
case for 10 seconds  
TL  
300  
°C  
*1: Repetitive rating; pulse width limited by max. junction temperature  
*2: VDD=50V, starting Tj=25°C, L=24mH, RG=25, IAS=4.5A  
*3: ISD4.5A, di/dt75A/us, VDDV(BR)DSS, TJ150°C  
HIRF830, HIRF830F  
HSMC Product Specification  

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