Datasheet > HIRF730F

HIRF730F

更新时间： 2024-01-07 16:58:28

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HSMC		/
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N-CHANNEL POWER MOSFET

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HIRF730F 数据手册

Spec. No. : MOS200406

Issued Date : 2004.10.01

Revised Date : 2005.04.22

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HIRF730 Series Pin Assignment

HIRF730 / HIRF730F

Tab

N-CHANNEL POWER MOSFET

3-Lead Plastic TO-220AB

Package Code: E

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Description

Third Generation HEXFETs from international Rectifier provide the

designer with the best combination of fast switching, ruggedized device

design, low on-resistance and cost-effectiveness.

Features

3-Lead Plastic TO-220FP

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

• Dynamic dv/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

Thermal Characteristics

HIRF730 Series Symbol

Symbol

Parameter

Value

TO-220AB

TO-220FP

Units

1.71

3.3

Thermal Resistance

Junction to Case Max.

Rθ_JC

°C/W

Thermal Resistance

Junction to Ambient Max.

Rθ_JA

°C/W

Absolute Maximum Ratings

Symbol

Parameter

Value

400

5.5

Units

V_DSS

I_D

Drain-Source Voltage

Drain to Current (Continuous)

Drain to Current (Pulsed) (*1)

Gate-to-Source Voltage (Continue)

Total Power Dissipation

TO-220AB

I_DM

V_GS

±20

TO-220FP

P_D

Derate above 25°C

0.58

0.3

TO-220AB

W/°C

TO-220FP

E_AS

I_AR

Single Pulse Avalanche Energy (*2)

Avalanche Current (*1)

Repetitive Avalanche Energy (*1)

Peak Diode Recovery (*3)

Operating Temperature Range

290

5.5

E_AR

d_v/d_t

T_j

7.4

V/ns

°C

-55 to 150

T_stg

Storage Temperature Range

-55 to 150

°C

Maximum Lead Temperature for Soldering Purposes, 1/8” from

case for 10 seconds

T_L

300

°C

*1: Repetitive rating; pulse width limited by max. junction temperature

*2: V_DD=50V, starting T_j=25°C, L=16mH, R_G=25Ω, I_AS=5.5A

*3: I_SD≤5.5A, di/dt≤90A/us, V_DD≤V_(BR)DSS, T_J≤150°C

HIRF730, HIRF730F

HSMC Product Specification

12 3 4

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