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HIP6601ABE-T PDF预览

HIP6601ABE-T

更新时间: 2024-09-24 05:24:23
品牌 Logo 应用领域
瑞萨 - RENESAS 驱动光电二极管
页数 文件大小 规格书
9页 101K
描述
0.73A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8

HIP6601ABE-T 数据手册

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HIP6601A, HIP6603A  
TM  
Data Sheet  
September 2000  
File Number 4884.1  
Synchronous-Rectified Buck MOSFET  
Drivers  
Features  
• Drives Two N-Channel MOSFETs  
• Adaptive Shoot-Through Protection  
• Internal Bootstrap Device  
The HIP6601A and HIP6603A are high frequency, dual  
MOSFET drivers specifically designed to drive two power  
N-Channel MOSFETs in a synchronous-rectified buck  
converter topology. These drivers combined with a HIP630x  
Multi-Phase Buck PWM controller and Intersil UltraFETs®  
form a complete core-voltage regulator solution for  
advanced microprocessors.  
• Supports High Switching Frequency  
- Fast Output Rise Time  
- Propagation Delay 30ns  
• Small 8 Lead SOIC and EPSOIC Package  
• Dual Gate-Drive Voltages for Optimal Efficiency  
• Three-State Input for Output Stage Shutdown  
• Supply Under Voltage Protection  
The HIP6601A drives the lower gate in a synchronous-  
rectifier to 12V, while the upper gate can be independently  
driven over a range from 5V to 12V. The HIP6603A drives  
both upper and lower gates over a range of 5V to 12V. This  
drive-voltage flexibility provides the advantage of optimizing  
applications involving trade-offs between switching losses  
and conduction losses.  
Applications  
• Core Voltage Supplies for Intel Pentium® III, AMD®  
Athlon™ Microprocessors  
The output drivers in the HIP6601A and HIP6603A have the  
capacity to efficiently switch power MOSFETs at frequencies  
up to 2MHz. Each driver is capable of driving a 3000pF load  
with a 30ns propagation delay and 50ns transition time. Both  
products implement bootstrapping on the upper gate with  
only an external capacitor required. This reduces  
• High Frequency Low Profile DC-DC Converters  
• High Current Low Voltage DC-DC Converters  
Related Literature  
implementation complexity and allows the use of higher  
performance, cost effective, N-Channel MOSFETs. Adaptive  
shoot-through protection is integrated to prevent both  
MOSFETs from conducting simultaneously.  
Technical Brief TB363 “Guidelines for Handling and  
Processing Moisture Sensitive Surface Mount Devices  
(SMDs)”  
Pinout  
Ordering Information  
HIP6601ACB, HIP6603ACB (SOIC)  
HIP6601ABE, HIP6603ABE (EPSOIC)  
TOP VIEW  
TEMP. RANGE  
o
PART NUMBER  
HIP6601ACB  
( C)  
PACKAGE  
8 Ld SOIC  
8 Ld SOIC  
PKG. NO.  
M8.15  
0 to 85  
0 to 85  
UGATE  
BOOT  
PWM  
1
2
3
4
8
7
6
5
PHASE  
PVCC  
VCC  
HIP6603ACB  
M8.15  
HIP6601ACB-T  
HIP6603ACB-T  
HIP6601ABE  
8 Ld SOIC Tape and Reel  
8 Ld SOIC Tape and Reel  
0 to 85  
0 to 85  
8 Ld EPSOIC M8.15B  
8 Ld EPSOIC M8.15B  
GND  
LGATE  
HIP6603ABE  
HIP6601ABE-T  
HIP6603ABE-T  
8 Ld EPSOIC Tape and Reel  
8 Ld EPSOIC Tape and Reel  
Block Diagram  
PVCC  
BOOT  
VCC  
UGATE  
PHASE  
+5V  
VCC FOR HIP6601A  
PVCC FOR HIP6603A  
SHOOT-  
10K  
THROUGH  
PROTECTION  
PWM  
CONTROL  
LOGIC  
LGATE  
GND  
10K  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
Pentium® is a registered trademark of Intel Corporation. | AMD® is a registered trademark of Advanced Micro Devices, Inc.  
Athlon™ is a trademark of Advanced Micro Devices, Inc. | UltraFET® is a registered trademark of Intersil Corporation.  

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