Datasheet > HI42C

HI42C

更新时间： 2024-09-23 22:05:03

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	35K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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HI42C 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	6 A	配置：	Single
最小直流电流增益 (hFE)：	15	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	20 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	3 MHz	Base Number Matches：	1

HI42C 数据手册

Spec. No. : HE9013-B

Issued Date : 1996.04.12

Revised Date : 2000.11.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HI42C

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HI42C is designed for use in general purpose amplifier, low

speed switching applications.

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature .................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 20 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage................................................................................... -100 V

BVCEO Collector to Emitter Voltage................................................................................ -100 V

BVEBO Emitter to Base Voltage.......................................................................................... -5 V

IC Collector Current............................................................................................................. -6 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-1mA, IE=0

IC=-30mA, IB=0

IC=-100uA, IC=0

VCE=-100V, VEB=0

VCE=-60V, IB=0

VEB=-5V, IC=0

IC=-6A, IB=-600mA

VCE=-4V, IC=-6A

VCE=-4V, IC=-300mA

VCE=-4V, IC=-3A

VCE=-10V, IC=-500mA, f=1MHz

BVCBO

BVCEO

BVEBO

ICES

ICEO

IEBO

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

-100

-5

-10

-50

-500

-1.5

-2

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3

中文翻译

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