Datasheet > HI3669

HI3669

更新时间： 2024-09-23 22:33:51

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	35K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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技术参数
数据手册

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HI3669 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	2 A	配置：	Single
最小直流电流增益 (hFE)：	300	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	1.25 W
子类别：	Other Transistors	表面贴装：	NO
Base Number Matches：	1

HI3669 数据手册

Spec. No. : HE9029-B

Issued Date : 1997.11.14

Revised Date : 2000.11.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HI3669

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HI3669 is designed for using in power amplifier applications,

power switching application.

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Tstg Storage Temperature .................................................................................... -55 ~ +150 °C

Tj Junction Temperature ................................................................................................ +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ................................................................................. 1.25 W

• Maximum Voltages and Currents

BVCBO Collector to Base Breakdown Voltage................................................................... 80 V

BVCEO Collector to Emitter Breakdown Voltage................................................................ 80 V

BVEBO Emitter to Base Emitter Breakdown Voltage............................................................ 5 V

IC Collector Current (DC)...................................................................................................... 2 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

IEBO

*VCE(sat)

*VBE(sat)

*hFE

IC=100uA

IC=10mA

IE=100uA

VCB=80V

VEB=5V

IC=1A, IB=50mA

VCE=2V, IC=500mA

VCB=10V, f=1MHz

1000

0.5

1.2

0.15

0.9

100

0.2

1.0

0.2

300

Cob

Ton

Tstg

MHz

IB1=-IB2=50mA, Duty Cycle≤1%

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3

中文翻译

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