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HI32C PDF预览

HI32C

更新时间: 2024-11-15 23:15:03
品牌 Logo 应用领域
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页数 文件大小 规格书
3页 34K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

HI32C 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):3 A配置:Single
最小直流电流增益 (hFE):10最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):15 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):3 MHzBase Number Matches:1

HI32C 数据手册

 浏览型号HI32C的Datasheet PDF文件第2页浏览型号HI32C的Datasheet PDF文件第3页 
Spec. No. : HE9002  
Issued Date : 1994.03.02  
Revised Date : 2002.01.17  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HI32C  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The HI32C is designed for use in general purpose amplifier and low  
speed switching applications.  
TO-251  
Absolute Maximum Ratings (Ta=25°C)  
Maximum Temperatures  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature.................................................................................................... +150 °C  
Maximum Power Dissipation  
Total Power Dissipation (Tc=25°C) ...................................................................................... 15W  
Maximum Voltages and Currents  
BVCBO Collector to Base Voltage.................................................................................... -100 V  
BVCEO Collector to Emitter Voltage................................................................................. -100 V  
BVEBO Emitter to Base Voltage........................................................................................... -5 V  
IC Collector Current ............................................................................................................. -3 A  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=-1mA, IE=0  
IC=-30mA, IB=0  
VCE=-100V, VBE=0  
VCE=-60V, IB=0  
VEB=-5V, IC=0  
IC=-3A, IB=-375mA  
VCE=-4V, IC=-3A  
VCE=-4V, IC=-1A  
VCE=-4V, IC=-3A  
VCE=-10V, IC=-500mA, f=1MHz  
BVCBO  
BVCEO  
ICES  
ICEO  
IEBO  
*VCE(sat)  
*VBE(on)  
*hFE1  
*hFE2  
fT  
-100  
-100  
-
-
-
-
-
-
-
-
-
-
-
-
V
V
uA  
uA  
mA  
V
-
-
-
-
-
25  
10  
3
-20  
-50  
-1  
-1.2  
-1.8  
-
V
50  
-
MHz  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
HI32C  
HSMC Product Specification  

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