Datasheet > HI210

HI210

更新时间： 2024-01-04 12:19:09

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
2页	25K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HI210 数据手册

Spec. No. : HE9011-B

Issued Date : 1996.03.12

Revised Date : 2000.11.01

Page No. : 1/2

HI-SINCERITY

MICROELECTRONICS CORP.

HI210

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HI210 is designed for low voltage, low-power, high-gain audio

amplifier applications.

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature .................................................................................................... +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 10 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... -40 V

BVCEO Collector to Emitter Voltage.................................................................................. -25 V

BVEBO Emitter to Base Voltage.......................................................................................... -8 V

IC Collector Current ............................................................................................................ -5 A

IB Base Current ................................................................................................................... -1 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-100uA, IE=0

IC=-10mA, IB=0

IE=-100uA, IC=0

VCB=-40V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

-40

-25

-8

-100

-0.3

-0.75

-1.8

-2.5

-1.6

IEBO

VEB=-8V, IC=0

*VCE(sat)1

*VCE(sat)2

*VCE(sat)3

*VBE(sat)

*VBE(on)

*hFE1

IC=-500mA, IB=-50mA

IC=-2A, IB=-200mA

IC=-5A, IB=-1A

IC=-5A, IB=-0.1A

VCE=-1V, IC=-2A

VCE=-1V, IC=-500mA

VCE=-1V, IC=-2A

VCE=-2V, IC=-5A

VCB=-10V, f=1MHz

VCE=-10V, IC=-100mA, f=100MHz

*hFE2

*hFE3

Cob

120

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

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