Datasheet > HI1538

HI1538

更新时间： 2024-09-13 22:48:39

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	34K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HI1538 数据手册

Spec. No. : HE9020-B

Issued Date : 1996.04.15

Revised Date : 2000.11.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HI1538

PNP EPITAXIAL PLANAR TRANSISTOR

Description

High-definition CRT display video output, wide-band amp.

Features

• High fT: fT=400MHz

• High breakdown voltage: VCEO=120Vmin

• Small reverse transfer capacitance and excellent HF response

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ....................................................................................................... -55 ~ +150 °C

Junction Temperature ................................................................................................................ +150 °C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................................ 1.3 W

Total Power Dissipation (Tc=25°C)................................................................................................. 20 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage ............................................................................................... -120 V

BVCEO Collector to Emitter Voltage ............................................................................................ -120 V

BVEBO Emitter to Base Voltage ...................................................................................................... -3 V

IC Collector Current .................................................................................................................. -200 mA

IC Peak Collector Current ......................................................................................................... -400 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-10uA, IE=0

IC=-1mA, IB=0

IE=-100uA, IC=0

VCB=-80V

VEB=-2V,

IC=-30mA, IB=-3mA

VCE=-10V, IC=-10mA

VCE=-10V, IC=-100mA

VCE=-10V, IC=-50mA

VCB=-30V, f=1MHz

BVCBO

BVCEO

BVEBO

ICBO

-120

-3

-100

-1

320

IEBO

*VCE(sat)

*VBE(sat)

*hFE1

*hFE2

400

2.8

160

MHz

Cob

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE1

Rank

Range

60-120

100-200

160-320

HSMC Product Specification

12 3

中文翻译

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