Datasheet > HI112

HI112

更新时间： 2024-09-15 22:48:39

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	44K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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技术参数
数据手册

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HI112 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	4 A
配置：	Single	最小直流电流增益 (hFE)：	200
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	25 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

HI112 数据手册

Spec. No. : HE9033

Issued Date : 1998.07.01

Revised Date : 2002.01.11

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HI112

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HI112 is designed for use in general purpose amplifier and low-

speed switching applications.

TO-251

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature...................................................................................... 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)..................................................................................... 25 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... 100 V

VCEO Collector to Emitter Voltage.................................................................................... 100 V

VEBO Emitter to Base Voltage.............................................................................................. 5 V

IC Collector Current .............................................................................................................. 4 A

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

ICBO

ICEO

IEBO

*VCE(sat)1

*VCE(sat)2

*VBE(on)

*VBE(sat)

*hFE1

100

500

200

2.8

IC=1mA

IC=30mA

VCB=80V

VCE=50V

VEB=5V

IC=2A, IB=8mA

IC=4A, IB=40mA

IC=2A, VCE=4V

IC=4A, IB=80mA

IC=0.5A, VCE=3V

IC=2A, VCE=3V

IC=4A, VCE=3V

VCB=10V

*hFE2

*hFE3

Cob

100

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HI112

HSMC Product Specification

12 3 4

中文翻译

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