Datasheet > HGB028N04A

HGB028N04A

更新时间： 2024-04-09 19:02:11

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	395K
描述
TO-263(或D2PAK)

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HGB028N04A 数据手册

Silicon N-Channel Power MOSFET

HGB028N04A

○

General Description：

V_DSS

I_D_（

150

HGB028N04A, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications. The

package form is TO-263, which accords with the RoHS standard.

Features：

Silicon limited current^）

I_D_（

Package limited^）

R_DS(ON)Typ

2.2

mΩ

l Fast Switching

l Low ON Resistance(Rdson@10v≤2.8mΩ)

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C

Continuous Drain Current Tc= 25°C(Package Limited)

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

150

I_D

360

I_DM

V_GS

±18

Avalanche Energy

336

E_AS

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

0.77

P_D

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

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