HG0811 PDF预览

HG0811

更新时间: 2025-07-17 18:53:51
品牌 Logo 应用领域
AKM /
页数 文件大小 规格书
3页 851K
描述
The HG0811 is a GaAs (Low Drift) Hall element with an output voltage of 75mV (MAX.). The GaAs Hall element has the most stable temperature characteristics, and its temperature characteristics are more stable when driven at a constant current than when driven at a constant voltage.

HG0811 数据手册

 浏览型号HG0811的Datasheet PDF文件第2页浏览型号HG0811的Datasheet PDF文件第3页 
GaAs Hall Element  
HG-0811  
HG-0811は小型SON形状GaAsホール素子です。  
標準はテーピングリール供給です(5,000pcs./Reel)  
Shipped in packet-tape reel(5,000pcs per reel)  
社製のご検討にあたっては本カタログの表紙事項を  
Notice : It is requested to read and accept "IMPORTANT NOTICE"  
written on the back of the front cover of this catalogue.  
良くお読みください。  
●最大定格 Absolute Maximum Ratings  
条ꢀꢀ件  
記号  
Conditions  
Item  
Symbol  
Limit  
Unit  
最 大 制 御 電 圧  
V
mW  
V
C
10  
Max. Input Voltage  
Ta=25℃  
最 大 許 容 損 失  
150  
P
D
Max.Input Power  
Topr  
40 125  
40 150  
Operating Temp. Range  
T
STG  
Storage Temp. Range  
Dimensional Drawing (Unit : mm)  
●外形寸法図  
0.38±0.05  
0.8±0.1  
CL  
●電気的特(測  
定温度 25℃Electrical Characteristics(Ta=25)  
0.3  
記号  
最小 標準 最大 単位  
A
Item  
Symbol  
Conditions  
Min. Typ. Max. Unit  
Sensor  
center  
2
3
H
ホール出力電圧  
B=50mT, VC=6V  
55  
130  
75  
mV  
Ω
V
φ0.2  
Output Hall Voltage  
Rin B=0mT, IC =0.1mA  
650 750  
650 750  
850  
850  
5
Input Resistance  
Rout  
B=0mT, IC =0.1mA  
B=0mT, VC=6V  
Ω
Output Resistance  
4
1
不 平 衡 電 圧  
VOS (Vu)  
11  
+11  
mV  
Offset Voltage  
Sensor  
center  
αV※  
H
0.06 %/℃  
0.3  
出力電圧の温度係数  
B=50mT, IC=5mA  
Ta=25125℃  
0.1  
Temp. Coefficient of V  
H
αRin  
入力抵抗の温度係数  
B=0mT, IC =0.1mA  
Ta=25125℃  
3と5は気的に接されていま。  
No.3 and No.5 terminals are  
electrically connected.  
%/℃  
Temp. Coefficient of Rin  
ホ ー ル 電 圧 直  
線 性  
%
B=0.1/0.5T, IC =5mA  
2
ΔK  
Linearity  
Notes : 1. V  
2.  
3. Rin=  
リ ー ド  
CL  
Pinning  
H
= VHM –VOS (Vu) (VHM:meter indication)  
1
VH (T2) – VH (T1)  
X 100  
(T2 – T1)  
±
VH  
=
X
X
VH (T1)  
1(±) 3(  
2(±) 4(  
Input  
1
Rin(T2) – Rin(T1) X 100  
Rin(T1)  
±
(T2 – T1)  
K (B1) – K (B2)  
[K (B1) + K (B2)]  
Output  
K
4.  
=
X 100  
2
/
T
1
= 25˚C, T  
2
= 125˚C  
VH  
IC • B  
K =  
参考mm)  
B1  
= 0.5T, B  
2
= 0.1T  
Land pattern (for reference only) (Unit : mm)  
●特性曲線図  
許容損失(P  
Characteristic Curves  
D
)―周囲温度(Ta)  
Allowable Package Power Dissipation  
200  
160  
120  
80  
40  
0
0.30  
0.55  
0.30  
0
20  
40  
60  
囲温度:Ta [℃]  
Ambient Temperature(˚C)  
80  
100  
120  
140  
49  

与HG0811相关器件

型号 品牌 获取价格 描述 数据表
HG0812 AKM

获取价格

The HG0812 is a GaAs (Low Drift) Hall element with an output voltage of 95mV (MAX.). The G
HG0813 AKM

获取价格

The HG0813 is a GaAs (Low Drift) Hall element with an output voltage of 102mV (MAX.). The
HG0814 AKM

获取价格

The HG0814 is a GaAs (Low Drift) Hall element with an output voltage of 102mV (MAX.). The
HG0815 AKM

获取价格

The HG0815 is a GaAs (Low Drift) Hall element with an output voltage of 110mV (MAX.). The
HG08504000J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
HG0A11 AKM

获取价格

The HG0A11 is a GaAs (Low Drift) Hall element with an output voltage of 75mV (MAX.). The G
HG0A14 AKM

获取价格

The HG0A14 is a GaAs (Low Drift) Hall element with an output voltage of 102mV (MAX.). The
HG0C11 AKM

获取价格

The HG0C11 is a GaAs (Low Drift) Hall element with an output voltage of 75mV (MAX.). The G
HG0C14 AKM

获取价格

The HG0C14 is a GaAs (Low Drift) Hall element with an output voltage of 102mV (MAX.). The
HG1-3 ETC

获取价格

HellermannTyton Product Safety Data Sheet