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HG-2150CA60.0000M-BXC

更新时间： 2024-11-06 10:25:19
品牌 Logo 应用领域
精工 - SEIKO 输出元件
页数 文件大小 规格书
1页 134K
描述
CRYSTAL OSCILLATOR, CLOCK, CMOS OUTPUT, ROHS COMPLIANT PACKAGE-4

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HG-2150CA60.0000M-BXC 数据手册

  
日本語  
ENGLISH  
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SEARCH  
Products  
Applications IC Partners  
Information News  
Contact  
Epson Crystal Devices Top Products Crystal Oscillator Product List HG-2150CA  
HG-2150CA (Crystal Oscillator Low Profile / High Stability SPXO)  
Frequency range  
2MHz to 60MHz  
Supply voltage  
Parametric Search  
3.3V Typ. / 5.0V Typ.  
Inventory Search   
Frequency tolerance  
HG-2150CA  
-6  
±15× 10 /-20°C ～ +70°C  
Brief Sheet  
Function  
Output enable(OE)  
External dimensions  
7.0 × 5.0 × 1.4mm  
Specifications  
Specifications  
Item  
Symbol  
Condition/Remarks  
SVH / BXH  
SVC / BXC  
f
Output frequency range  
Supply voltage  
1.000MHz ～ 60.000MHz  
0
V
CC  
H: 5.0 V ±0.5V  
C: 3.3 V ±0.3V  
Storage  
temperature  
T_stg  
T_use  
-40°C to +125°C  
Storage as single product.  
V: -20°C ～ +70°C  
X: -40°C ～ +85°C  
Operating temperature  
-6  
-20°C to +70°C  
-20°C to +70°C  
S: ±15 × 10  
Frequency  
tolerance  
f_tol  
-6  
B: ±25 × 10  
Current  
consumption  
I
30mA Max.  
15mA Max.  
25mA Max.  
12mA Max.  
No load condition, OE=Vcc  
OE=GND  
CC  
Disable current  
Symmetry  
I_std  
SYM  
CMOS負荷:50%V レベル  
45% ～ 55%  
CC  
V
V
CC  
-0.4V Min.  
I
=-4mA  
= 4mA  
OH  
OH  
Output voltage  
V
I
OL  
0.4 V Max.  
15pF Max.  
OL  
Output load  
condition  
(CMOS)  
L_CMOS  
CMOS load  
V
IH  
70% V Min.  
CC  
Input voltage  
OE terminal  
V
IL  
30% V Max.  
CC  
Rise time /  
Fall time  
20% V to 80% V level  
tr / tf  
4ns Max.  
CC  
CC  
Start-up time  
t_str  
10ms Max.  
Time at minimum supply voltage to be 0 s.  
+25°C, 10 year  
-6  
Frequency aging  
f_aging  
±10 × 10 / year Max.  
External dimensions  
(Unit: mm)  
Note.  
OE pin  
OE pin = HIGH or "open" : Specified frequency output  
OE pin = LOW : Output is high impedance  
Footprint (Recommended)  
(Unit: mm)  
To maintain stable operation, provide a 0.01uF to 0.1uF by-pass capacitor at a location as near as possible to the power source terminal of the crystal product (between  
Vcc - GND).  
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