Datasheet > HFT150-50

HFT150-50

更新时间： 2024-09-18 03:41:39

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描述
N-Channel Enhancement Mode HF POWER MOSFET

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HFT150-50 数据手册

HFT150-50

HF POWER MOSFET

N-Channel Enhancement Mode

DESCRIPTION:

The HFT150-50 is Designed for

General Purpose Class B Power

Amplifier Applications Up to 100 MHz.

PACKAGE STYLE .500 4L FLG

.112x45°

Ø.125 NOM.

FULL R

FEATURES:

· P_G= 20 dB Typ. at 150 W/30 MHz

· h_D= 50% Typical at 150 W/30 MHz

· Omnigold™ Metalization

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.220 / 5.59

.230 / 5.84

I_D

16 A

125 V

.125 / 3.18

.245 / 6.22

.255 / 6.48

V_DSS

V_GS

P_DISS

T_J

.720 / 18.28

.7.30 / 18.54

± 30 V

.970 / 24.64

.495 / 12.57

.003 / 0.08

.090 / 2.29

.150 / 3.81

.980 / 24.89

.505 / 12.83

.007 / 0.18

.110 / 2.79

.175 / 4.45

.280 / 7.11

1.050 / 26.67

300 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

0.6 ^OC/W

T_STG

q_JC

.980 / 24.89

ORDER CODE: ASI10617

CHARACTERISTICS T_C= 25 ^OC

NONE

SYMBOL

V_(BR)DSS

I_DSS

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_D= 50 mA

V_DSS= 50 V

V_GS= 20 V

V_DS= 10 V

V_GS= 0 V

V_DS= 0 V

I_D= 100 mA

I_D= 5.0 A

125

m A

5.0

1.0

5.0

I_GSS

V_GS(th)

g_fs

1.0

3.5

C_iss

C_oss

C_rss

300

150

V_DS= 50 V

V_GS= 0 V

f = 1.0 MHz

G_ps

h _D

V_DD= 50 V I_DQ= 250 mA

F_O= 30 & 30.001 MHz

P_OUT= 150W (PEP)

VSWR 30:1 @ all phase angles

NO DEGRADATION IN OUTPUT POWER

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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