N-Channel MOSFET
Shantou Huashan Electronic Devices Co.,Ltd.
HFP630
█ APPLICATIONSL
TO-220
High Voltage High-Speed Switching.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
Tstg — — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃
Tj — — Operating Junction Temperature ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃
PD — — Allowable Power Dissipation(Tc=25℃)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 72W
VDSS — — Drain-Source Voltage ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 200V
VDGR — — Drain-Gate Voltage (RGS=1MΩ) ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 500V
VGSS — — Gate-Source Voltage ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ±30V
ID — — *Drain Curren(t Tc=25℃)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 9.0A
* Drain current limited by maximumjunction temperature
1―G
2―D
3―S
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source Leakage Current
Gate Threshold Voltage
200
V
ID=250μA ,VGS=0V
10 μA VDS =200V,VGS=0
IGSS
±100 nA VGS=±30V , VDS =0V
2.0
4.0
V
?
VDS = VGS , ID =250μA
VGS=10V, ID =4.5A
VGS(th)
RDS(on) Static Drain-Source On-Resistance
0.34 0.4
7.05
S
VDS = 40V , ID =4.5A *
gfs
Forward Transconductance
Input Capacitance
Ciss
pF
550 720
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Rise Time
VDS =25V, VGS=0,f=1MHz
Coss
85
22
110
29
pF
pF
nS
nS
nS
nS
nC
nC
nC
A
Crss
td(on)
11
30
VDD =100V,
ID =9A
RG= 25 Ω *
tr
td(off)
tf
70
150
130
140
29
Turn - Off Delay Time
Fall Time
60
65
VDS =0.8VDSS
VGS=10V
Qg
Qgs
Qgd
Is
Total Gate Charge
22
Gate–Source Charge
Gate–Drain Charge
3.6
10.2
ID=9.0A *
Continuous Source Current
Diode Forward Voltage
9.0
1.5
VSD
IS =9.0A , VGS=0
V
*Pulse Test:Pulse Width≤ 300μs,Duty Cycle≤ 2%