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HFM103-M PDF预览

HFM103-M

更新时间: 2024-09-16 12:07:07
品牌 Logo 应用领域
辰达行 - MDD 二极管光电二极管功效
页数 文件大小 规格书
2页 87K
描述
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER

HFM103-M 数据手册

 浏览型号HFM103-M的Datasheet PDF文件第2页 
HFM101-M THRU HFM107-M  
SURFACE MOUNT HIGH EFFICIENCY RECTIFIER  
1.0 Ampere  
Reverse Voltage - 50 to 1000 Volts Forward Current -  
SOD-123FL  
FEATURES  
Cathode Band  
Top View  
Glass passivated device  
Ideal for surface mouted applications  
Low reverse leakage  
Metallurgically bonded construction  
High temperature soldering guaranteed:  
2.8±0.1  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.6±0.25  
MECHANICAL DATA  
Case: JEDEC SOD-123FL molded plastic body over passivated chip  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
3.7±0.2  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.0007 ounce, 0.02 grams  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
SYMBOLS  
HFM106-M  
U1K  
HFM104-M HFM105-M  
HFM107-M  
U1M  
HFM102-M HFM103-M  
HFM101-M  
U1A  
UNITS  
MDD Catalog  
Number  
U1B  
100  
70  
U1D  
200  
140  
200  
U1G  
400  
280  
400  
U1J  
600  
420  
600  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VOLTS  
VOLTS  
VOLTS  
50  
35  
50  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
100  
Maximum DC blocking voltage  
1000  
Maximum average forward rectified current  
I(AV)  
1.0  
Amp  
Peak forward surge current  
IFSM  
VF  
25.0  
1.3  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
Maximum instantaneous forward voltage at1.0A  
1.7  
1.0  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
5.0  
100.0  
µ
A
IR  
TA=100 C  
trr  
ns  
K/W  
C
Maximum reverse recovery time (NOTE 1)  
75  
50  
Typical thermal resistance  
Operating junction and storage temperature range  
RθJA  
180  
TJ,TSTG  
-50 to +150  
Note:  
1.Measured with IF=0.5A, IR=1A, Irr=0.25A.  
MDD ELECTRONIC  

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