Datasheet > HFI50N06

HFI50N06

更新时间： 2022-12-18 01:16:46

品牌	Logo	应用领域
SEMIHOW		/
页数	文件大小	规格书
8页	642K
描述
60V N-Channel MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HFI50N06 数据手册

Nov 2009

BV_DSS= 60 V

R_DS(on)= 18 mΩ

HFW50N06 / HFI50N06

60V N-Channel MOSFET

I_D= 50 A

D²-PAK I²-PAK

FEATURES

 Originative New Design

HFW50N06

HFI50N06

 Superior Avalanche Rugged Technology

 Robust Gate Oxide Technology

 Very Low Intrinsic Capacitances

 Excellent Switching Characteristics

 Unrivalled Gate Charge : 40 nC (Typ.)

 Extended Safe Operating Area

 Lower R_DS(ON): 0.018 Ω (Typ.) @V_GS=10V

 100% Avalanche Tested

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T_C=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

V_DSS

Drain-Source Voltage

Drain Current

I_D

– Continuous (T_C= 25℃)

– Continuous (T_C= 100℃)

Drain Current

35.4

200

±25

490

I_DM

Drain Current

– Pulsed

(Note 1)

V_GS

E_AS

I_AR

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 2)

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25℃)*

V/ns

7.0

3.75

120

Power Dissipation (T_C= 25℃)

- Derate above 25℃

0.8

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +175

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R_θJC

R_{θ JA}

Junction-to-Case

1.24

Junction-to-Ambient*

Junction-to-Ambient

℃/W

62.5

R_θJA

* When mounted on the minimum pad size recommended (PCB Mount)

◎ SEMIHOW REV.A0,Mar 2009

12 3 4 5 6 7 8

下载PDF

与HFI50N06相关器件

型号	品牌	描述	获取价格	数据表
HFI50N06L	HUASHAN	TO-262	获取价格
HFI5N50S	SEMIHOW	500V N-Channel MOSFET	获取价格
HFI5N60S	SEMIHOW	600V N-Channel MOSFET	获取价格
HFI5N65S	SEMIHOW	650V N-Channel MOSFET	获取价格
HFI640	SEMIHOW	200V N-Channel MOSFET	获取价格
HFI730	HUASHAN	TO-262	获取价格