Datasheet > HFF630

HFF630

更新时间： 2024-02-06 14:53:53

品牌	Logo	应用领域
华汕 - HUASHAN		/
页数	文件大小	规格书
5页	232K
描述
N-Channel MOSFET

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技术参数
数据手册

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HFF630 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

HFF630 数据手册

N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd.

HFF630

█ APPLICATIONSL

TO-220F

High Voltage High-Speed Switching.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Operating Junction Temperature ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_D— — Allowable Power Dissipation（T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 38W

V_DSS— — Drain-Source Voltage ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 200V

V_DGR— — Drain-Gate Voltage (R_GS=1MΩ) ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 500V

V_GSS— — Gate-Source Voltage ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ±30V

I_D— — *Drain Curren（t T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 9.0A

* Drain current limited by maximumjunction temperature

1―G

2―D

3―S

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate –Source Leakage Current

Gate Threshold Voltage

200

I_D=250μA ,V_GS=0V

10 μA V_DS=200V，V_GS=0

I_GSS

±100 nA V_GS=±30V , V_DS=0V

2.0

4.0

V_DS= V_GS, I_D=250μA

V_GS=10V, I_D=4.5A

V_GS(th)

R_DS(on)Static Drain-Source On-Resistance

0.34 0.4

7.05

V_DS= 40V , I_D=4.5A *

gfs

Forward Transconductance

Input Capacitance

Ciss

550 720

Output Capacitance

Reverse Transfer Capacitance

Turn - On Delay Time

Rise Time

V_DS=25V, V_GS=0,f=1MHz

Coss

110

Crss

t_d(on)

V_DD=100V,

I_D=9A

R_G= 25 Ω *

t_d(off)

t_f

150

130

140

Turn - Off Delay Time

Fall Time

VDS =0.8VDSS

VGS=10V

Qgs

Qgd

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

3.6

10.2

ID=9.0A *

Continuous Source Current

Diode Forward Voltage

9.0

1.5

V_SD

I_S=9.0A , V_GS=0

Thermal Resistance，

Junction-to-Case

℃/W

Rth（j-c）

3.33

*Pulse Test：Pulse Width≤ 300μs，Duty Cycle≤ 2%

12 3 4 5

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