HFA15TB60PBF

更新时间： 2024-09-24 04:21:31

品牌	Logo	应用领域
英飞凌 - INFINEON		整流二极管瞄准线功效局域网
页数	文件大小	规格书
7页	249K
描述
HEXFRED

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中文翻译

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数据手册

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HFA15TB60PBF 数据手册

PD-95738

HFA15TB60PbF

HFA15TB60-1

HEXFRED

Ultrafast,SoftRecoveryDiode

Features

Ultrafast Recovery

Ultrasoft Recovery

Very Low I_RRM

V_R= 600V

V_F= 1.7V

Very Low Q_rr

Specified at Operating Conditions

Lead-Free

Q_rr* = 84nC

di_(rec)M/dt * = 188A/µs

* 125°C

Benefits

Reduced RFI and EMI

Reduced Power Loss in Diode and Switching

Transistor

Higher Frequency Operation

Reduced Snubbing

Reduced Parts Count

Description

International Rectifier's HFA15TB60 is a state of the art ultra fast recovery

diode. Employing the latest in epitaxial construction and advanced processing

techniques it features a superb combination of characteristics which result in

performance which is unsurpassed by any rectifier previously available. With

basic ratings of 600 volts and 8 amps per Leg continuous current, the

HFA15TB60 is especially well suited for use as the companion diode for IGBTs

and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product

line features extremely low values of peak recovery current (I_RRM) and does not

HFA15TB60PbF

TO-220AC

exhibit any tendency to "snap-off" during the t_bportion of recovery. The

HEXFRED features combine to offer designers a rectifier with lower noise and

significantly lower switching losses in both the diode and the switching transistor.

These HEXFRED advantages can help to significantly reduce snubbing,

component count and heatsink sizes. The HEXFRED HFA15TB60 is ideally suited

for applications in power supplies and power conversion systems (such as

inverters), motor drives, and many other similar applications where high speed,

high efficiency is needed.

TO-262

Absolute Maximum Ratings

Parameter

Cathode-to-Anode Voltage

Max

600

Units

V_R

I_F@ T_C= 100°C

Continuous Forward Current

Single Pulse Forward Current

Maximum Repetitive Forward Current

I_FSM

I_FRM

150

_D@ T_C= 25°C

_D@ T_C= 100°C

Maximum Power Dissipation

Operating Junction and

T_J

- 55 to +150

T_STG

Storage Temperature Range

www.irf.com

10/22/04

12 3 4 5 6 7

中文翻译

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