5秒后页面跳转
HFA135NH40R PDF预览

HFA135NH40R

更新时间: 2024-11-09 03:46:31
品牌 Logo 应用领域
英飞凌 - INFINEON 整流二极管局域网软恢复二极管
页数 文件大小 规格书
5页 327K
描述
HEXFRED Ultrafast, Soft Recovery Diode

HFA135NH40R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PUFM-X1Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.71
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PUFM-X1元件数量:1
相数:1端子数量:1
最大输出电流:135 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大反向恢复时间:0.12 µs表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:40Base Number Matches:1

HFA135NH40R 数据手册

 浏览型号HFA135NH40R的Datasheet PDF文件第2页浏览型号HFA135NH40R的Datasheet PDF文件第3页浏览型号HFA135NH40R的Datasheet PDF文件第4页浏览型号HFA135NH40R的Datasheet PDF文件第5页 
PD -2.455 rev. B 03/99  
HFA135NH40R  
Ultrafast, Soft Recovery Diode  
VR = 400V  
HEXFREDTM  
LUG  
TERMINAL  
CATHODE  
Features  
• Reduced RFI and EMI  
• Reduced Snubbing  
VF(typ.)ƒ = 1V  
IF(AV) = 135A  
• Extensive Characterization of  
Recovery Parameters  
Qrr (typ.) = 290nC  
IRRM(typ.)= 7.5A  
trr(typ.)= 50ns  
a
d
di(rec)M/dt (typ.)ƒ = 270A/µs  
BASE ANODE  
Description  
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency  
power conditioning systems. An extensive characterization of the recovery  
behavior for different values of current, temperature and di/dt simplifies the  
calculations of losses in the operating conditions. The softness of the recovery  
eliminates the need for a snubber in most applications. These devices are  
ideally suited for power converters, motors drives and other applications where  
switching losses are significant portion of the total losses.  
HALF-PAK  
Absolute Maximum Ratings (per Leg)  
Parameter  
Max.  
Units  
VR  
Cathode-to-Anode Voltage  
Continuous Forward Current  
Continuous Forward Current  
Single Pulse Forward Current   
Non-Repetitive Avalanche Energy ‚  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
400  
211  
103  
900  
1.4  
V
IF @ TC = 25°C  
IF @ TC = 100°C  
IFSM  
A
EAS  
mJ  
W
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
379  
152  
-55 to +150  
°C  
TSTG  
Storage Temperature Range  
Thermal - Mechanical Characteristics  
Parameter  
Min.  
––––  
Typ.  
––––  
0.15  
Max.  
0.33  
Units  
RthJC  
RthCS  
Wt  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Weight  
°C/W  
K/W  
––––  
––––  
––––  
25 (2.8)  
40 (4.6)  
80  
––––  
26 (0.9)  
––––  
––––  
––––  
––––  
g (oz)  
Mounting Torque „  
TerminalTorque  
15 (1.7)  
30 (3.4)  
––––  
lbf•in  
(N•m)  
Vertical Pull  
lbf•in  
2 inch Lever Pull  
––––  
40  
Note:  Limited by junction temperature  
‚ L = 100µH, duty cycle limited by max TJ  
ƒ 125°C  
„
Mounting surface must be smooth, flat, free or burrs or other  
protrusions. Apply a thin even film or thermal grease to mounting  
surface. Gradually tighten each mounting bolt in 5-10 lbf•in steps  
until desired or maximum torque limits are reached. Module  
1

与HFA135NH40R相关器件

型号 品牌 获取价格 描述 数据表
HFA135NH40RPBF INFINEON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 135A, Silicon,
HFA1405 INTERSIL

获取价格

Quad, 560MHz, Low Power, Video Operational Amplifier
HFA1405_05 INTERSIL

获取价格

Quad, 560MHz, Low Power, Video Operational Amplifier
HFA1405IA ETC

获取价格

Current-Feedback Operational Amplifier
HFA1405IA96 RENESAS

获取价格

4 CHANNEL, VIDEO AMPLIFIER, PDSO16, PLASTIC, SSOP-16
HFA1405IB INTERSIL

获取价格

Quad, 560MHz, Low Power, Video Operational Amplifier
HFA1405IB96 ETC

获取价格

Current-Feedback Operational Amplifier
HFA1405IP INTERSIL

获取价格

Quad, 560MHz, Low Power, Video Operational Amplifier
HFA1405IP RENESAS

获取价格

VIDEO AMPLIFIER, PDIP14
HFA1405MJ/883 RENESAS

获取价格

IC,OP-AMP,QUAD,BIPOLAR,DIP,14PIN,CERAMIC