HFA08TB120PbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
Available
• Very low IRRM
• Very low Qrr
RoHS*
COMPLIANT
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for industrial level
Base
cathode
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BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
1
3
• Reduced parts count
Cathode Anode
DESCRIPTION
TO-220AC
HFA08TB120 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 8 A continuous current, the
HFA08TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08TB120 is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
VR
1200 V
3.3 V
VF at 8 A at 25 °C
IF(AV)
8 A
trr (typical)
28 ns
TJ (maximum)
150 °C
140 nC
85 A/µs
4.5 A
Qrr (typical)
dI(rec)M/dt (typical) at 125 °C
IRRM (typical)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
1200
V
Maximum continuous forward current
Single pulse forward current
IF
TC = 100 °C
8
IFSM
IFRM
130
32
A
Maximum repetitive forward current
TC = 25 °C
73.5
Maximum power dissipation
PD
W
T
C = 100 °C
29
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94045
Revision: 25-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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