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HFA08TB120STRL PDF预览

HFA08TB120STRL

更新时间: 2024-11-27 12:59:59
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威世 - VISHAY 整流二极管功效局域网超快软恢复二极管
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HFA08TB120STRL 数据手册

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HFA08TB120PbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 8 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
Available  
• Very low IRRM  
• Very low Qrr  
RoHS*  
COMPLIANT  
• Specified at operating conditions  
• Lead (Pb)-free  
• Designed and qualified for industrial level  
Base  
cathode  
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
1
3
• Reduced parts count  
Cathode Anode  
DESCRIPTION  
TO-220AC  
HFA08TB120 is a state of the art ultrafast recovery diode.  
Employing the latest in epitaxial construction and advanced  
processing techniques it features a superb combination of  
characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic  
ratings of 1200 V and 8 A continuous current, the  
HFA08TB120 is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA08TB120 is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
VR  
1200 V  
3.3 V  
VF at 8 A at 25 °C  
IF(AV)  
8 A  
trr (typical)  
28 ns  
TJ (maximum)  
150 °C  
140 nC  
85 A/µs  
4.5 A  
Qrr (typical)  
dI(rec)M/dt (typical) at 125 °C  
IRRM (typical)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
1200  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
8
IFSM  
IFRM  
130  
32  
A
Maximum repetitive forward current  
TC = 25 °C  
73.5  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
29  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94045  
Revision: 25-Jul-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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