Bulletin PD -2.383 rev. C 11/00
HFA08TB120
TM
HEXFRED
Ultrafast, Soft Recovery Diode
BASE
CATHODE
VR = 1200V
Features
VF (typ.)* = 2.4V
IF (AV) = 8.0A
Qrr (typ.)=140nC
IRRM (typ.) = 4.5A
4
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
2
• Very Low Qrr
trr (typ.) = 28ns
di(rec) M /dt (typ.)* = 85A /µs
• Specified at Operating Conditions
1
3
ANODE
CATHODE
2
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
TO-220AC
Description
International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
8 amps continuous current, the HFA08TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
Max
Units
VR
Cathode-to-AnodeVoltage
ContinuousForwardCurrent
SinglePulseForwardCurrent
MaximumRepetitiveForwardCurrent
MaximumPowerDissipation
MaximumPowerDissipation
OperatingJunctionand
1200
8.0
V
A
IF @ TC = 100°C
IFSM
IFRM
130
32
PD @ TC = 25°C
73.5
W
PD @ TC = 100°C
29
TJ
TSTG
- 55 to 150
°C
StorageTemperatureRange
*125°C
1