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HFA08TB120STRL PDF预览

HFA08TB120STRL

更新时间: 2024-11-27 12:59:59
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管功效局域网软恢复二极管
页数 文件大小 规格书
7页 133K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3

HFA08TB120STRL 数据手册

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Bulletin PD -2.383 rev. C 11/00  
HFA08TB120  
TM  
HEXFRED  
Ultrafast, Soft Recovery Diode  
BASE  
CATHODE  
VR = 1200V  
Features  
VF (typ.)* = 2.4V  
IF (AV) = 8.0A  
Qrr (typ.)=140nC  
IRRM (typ.) = 4.5A  
4
• Ultrafast Recovery  
• Ultrasoft Recovery  
• Very Low IRRM  
2
• Very Low Qrr  
trr (typ.) = 28ns  
di(rec) M /dt (typ.)* = 85A /µs  
• Specified at Operating Conditions  
1
3
ANODE  
CATHODE  
2
Benefits  
• Reduced RFI and EMI  
• Reduced Power Loss in Diode and Switching  
Transistor  
• Higher Frequency Operation  
• Reduced Snubbing  
• Reduced Parts Count  
TO-220AC  
Description  
International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode.  
Employing the latest in epitaxial construction and advanced processing techniques it  
features a superb combination of characteristics which result in performance which is  
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and  
8 amps continuous current, the HFA08TB120 is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the  
HEXFRED product line features extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to "snap-off" during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier with lower noise and significantly  
lower switching losses in both the diode and the switching transistor. These HEXFRED  
advantages can help to significantly reduce snubbing, component count and heatsink  
sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies  
and power conversion systems (such as inverters), motor drives, and many other similar  
applications where high speed, high efficiency is needed.  
Absolute Maximum Ratings  
Parameter  
Max  
Units  
VR  
Cathode-to-AnodeVoltage  
ContinuousForwardCurrent  
SinglePulseForwardCurrent  
MaximumRepetitiveForwardCurrent  
MaximumPowerDissipation  
MaximumPowerDissipation  
OperatingJunctionand  
1200  
8.0  
V
A
IF @ TC = 100°C  
IFSM  
IFRM  
130  
32  
PD @ TC = 25°C  
73.5  
W
PD @ TC = 100°C  
29  
TJ  
TSTG  
- 55 to 150  
°C  
StorageTemperatureRange  
*125°C  
1

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