Datasheet > HFA08TB120SPBF_10

HFA08TB120SPBF_10

更新时间： 2024-11-27 10:47:43

品牌	Logo	应用领域
威世 - VISHAY		二极管超快软恢复二极管
页数	文件大小	规格书
8页	152K
描述
HEXFRED Ultrafast Soft Recovery Diode, 8 A

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VS-HFA08TB120SPbF

Vishay High Power Products

HEXFRED^®

Ultrafast Soft Recovery Diode, 8 A

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I_RRM

Base

cathode

• Very low Q_rr

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Halogen-free according to IEC 61249-2-21

definition

N/C

D²PAK

Anode

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

PRODUCT SUMMARY

DESCRIPTION

V_R

V_Fat 8 A at 25 °C

I_F(AV)

1200 V

3.3 V

VS-HFA08TB120S is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 1200 V and 8 A continuous current, the

VS-HFA08TB120S is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED^®product line features

extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to “snap-off” during the t_b

portion of recovery. The HEXFRED features combine to offer

designers a rectifier with lower noise and significantly lower

switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA08TB120S is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

8 A

_rr(typical)

T_J(maximum)

_rr(typical)

dI_(rec)M/dt (typical) at 125 °C

_RRM(typical)

28 ns

150 °C

140 nC

85 A/μs

4.5 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

1200

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

I_FSM

I_FRM

130

Maximum repetitive forward current

73.5

T_C= 25 °C

Maximum power dissipation

P_D

_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

- 55 to + 150

°C

Document Number: 94046

Revision: 22-Feb-10

For technical questions, contact: diodestech@vishay.com

www.vishay.com

12 3 4 5 6 7 8

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与HFA08TB120SPBF_10相关器件

型号	品牌	获取价格	描述	数据表
HFA08TB120STRL	INFINEON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
HFA08TB120STRL	VISHAY	获取价格	暂无描述
HFA08TB120STRLPBF	VISHAY	获取价格	HEXFRED Ultrafast Soft Recovery Diode, 8 A
HFA08TB120STRR	INFINEON	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, Silicon, D2PAK-3
HFA08TB120STRRPBF	VISHAY	获取价格	HEXFRED Ultrafast Soft Recovery Diode, 8 A
HFA08TB60	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A
HFA08TB60	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA08TB60PBF	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 8 A
HFA08TB60PBF	INFINEON	获取价格	Ultrafast, Soft Recovery Diode
HFA08TB60PBF_11	VISHAY	获取价格	HEXFRED Ultrafast Soft Recovery Diode, 8 A

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