Datasheet > HF30C120ACB

HF30C120ACB

更新时间： 2024-09-24 20:09:15

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管
页数	文件大小	规格书
1页	13K
描述
Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon, 4 INCH, WAFER

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HF30C120ACB 数据手册

PD-2.499

HF30C120ACB

TARGET

HF30C120ACB Hexfred Die in Wafer Form

1200 V

Size 30

4" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

Description

Guaranteed (Min/Max)

Test Conditions

T_J= 25°C, I_F= 4.0A

V_FM

Forward Voltage

2.8V Max.

1200V Min.

10µA Max.

BV_R

Reverse Breakdown Voltage

Reverse Leakage Current

T_J= 25°C, I_R= 250µA

T_J= 25°C, V_R= 1200V

I_RM

Mechanical Data

Norminal Backmetal Composition, Thickness:

Norminal Front Metal Composition, Thickness:

Dimensions:

Al-Ti-Ni-Ag ( 1kA-1kA-4kA-6kA )

99% Al, 1% Si (3 microns)

0.115" x 0.155"

Wafer Diameter:

100mm, with std. < 100 > flat

.015" + / -.003"

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5156

100 Microns

Reject Ink Dot Size

0.25mm Diameter Minimum

See Die Outline drawing below

Store in original container, in dessicated

nitrogen, with no contamination

Ink Dot Location

Recommended Storage Environment:

Reference Standard IR packaged part ( for design ) : HFA08PB120

Die Outline

2.92

NOTES :

(.115 )

INK DOT

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )

2. CONTROLLING DIMENSION : ( INCH )

3. LETTER DESIGNATION :

LOCATION

S = SOURCE

G = GATE

4. DIMENSIONAL TOLERANCES

SK = SOURCE KELVIN

IS = CURRENT SENSE

ANODE

BONDING PADS : < 0.635 TOLERANCE = +/- 0.013

2.51

(.099 )

3.94

(.155 )

WIDTH

LENGTH

OVERALL DIE

WIDTH

< (.0250 ) TOLERANCE =+/- (.0005 )

> 0.635 TOLERANCE = +/- 0.025

> (.0250 ) TOLERANCE = +/- (.0010 )

< 1.270 TOLERANCE = +/- 0.102

< (.050 ) TOLERANCE = +/- (.004 )

> 0.635 TOLERANCE = +/- 0.203

> (.050 ) TOLERANCE = +/- (.008 )

LENGTH

1.50

(.059 )

5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III

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