Datasheet > HF220-28

HF220-28

更新时间： 2024-09-22 22:33:23

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	27K
描述
NPN SILICON RF POWER TRANSISTOR

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HF220-28 数据手册

HF220-28

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .500 4L FLG

The ASI HF220-28 is Designed for

.112x45°

FEATURES:

Ø.125 NOM.

FULL R

· P_G= 12 dB min. at 220 W/30 MHz

· IMD₃= -30 dBc max. at 220 W(PEP)

· Omnigold™ Metalization System

MAXIMUM RATINGS

I_C

16 A

70 V

MINIMUM

MAXIMUM

DIM

inches / mm

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.220 / 5.59

.230 / 5.84

.125 / 3.18

.245 / 6.22

.255 / 6.48

35 V

.720 / 18.28

.7.30 / 18.54

4.0 V

.970 / 24.64

.495 / 12.57

.003 / 0.08

.090 / 2.29

.150 / 3.81

.980 / 24.89

.505 / 12.83

.007 / 0.18

.110 / 2.79

.175 / 4.45

.280 / 7.11

1.050 / 26.67

320 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

0.7 ^OC/W

T_STG

q_JC

.980 / 24.89

ORDER CODE: ASI10609

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CEO

BV_CES

BV_EBO

I_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 200 mA

I_C= 100 mA

I_E= 20 mA

V_CE= 30 V

V_CE= 35 V

V_CE= 5.0 V

4.0

5.0

---

I_CES

h_FE

I_C= 7.0 A

---

C_OB

V_CB= 28 V

V_CE= 28 V

f = 1.0 MHz

P_OUT= 220 W

450

---

G_P

-30

I_CQ= 750 mA

IMD₃

h _C

dBc

---

Load

---

VSWR

Mismatch

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

Specifications are subject to change without notice.

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