Datasheet > HF15D060ACE

HF15D060ACE

更新时间： 2024-09-23 17:30:11

品牌	Logo	应用领域
英飞凌 - INFINEON		功效二极管
页数	文件大小	规格书
2页	27K
描述
Rectifier Diode, 1 Phase, 1 Element, 15A, Silicon, 125 MM, WAFER

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HF15D060ACE 数据手册

PD - 94413

HF15D060ACE

Hexfred Die in Wafer Form

600V

Features

• GEN3 Hexfred Technology

_F(nom)=15A

• Low V_F

• Low I_RR

• Low t_RR

_F(typ)= 1.2V @ I_F(nom)@ 25°C

• Soft Reverse Recovery

Motor Control Antiparallel Diode

125mm Wafer

Benefits

• Benchmark Efficiency for Motor Control Applications

• Rugged Transient Performance

• Low EMI

Reference Standard IR Package Part: IRGS15B60KD

• Excellent Current Sharing in Parallel Operation

• Qualified for Industrial Market

Electrical Characteristics (Wafer Form)

Parameter

Description

Guaranteed (min, max)

Test Conditions

V_F

Forward Voltage Drop

0.8V min, 1.1V max

600V min

I_C= 3A, T_J= 25°C

BV_R

I_RM

Reverse Breakdown Voltage

Reverse Leakage Current

T_J= 25°C, I_R= 1mA

T_J= 25°C, V_R= 600V

15µA max

Mechanical Data

Nominal Backmetal Composition, (Thickness)

Nominal Front Metal Composition, (Thickness)

Dimensions

Cr- Ni - Ag, (1kA - 4kA - 6kA)

99% Al/1% Si, (3µm)

0.085'' x 0.130"

Wafer Diameter

125mm, with std. < 100 > flat

381µm, +/-15µm

Wafer Thickness, Tolerance

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5509

100µm

Reject Ink Dot Size

0.25mm diameter minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300°C

Ink Dot Location

Recommended Storage Environment

Recommended Die Attach Conditions

Die Outline

www.irf.com

04/19/02

中文翻译

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