Datasheet > HF150-50F_07

HF150-50F_07

更新时间： 2024-11-11 10:46:39

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	20K
描述
NPN SILICON RF POWER TRANSISTOR

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HF150-50F_07 数据手册

HF150-50F

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI HF150-50S is a 50 V epitaxial

transistor designed for SSB communications.

The device utilizes emitter ballastiong for

ruggedness.

PACKAGE STYLE .500 4L FLG

.112x45°

FEATURES:

Ø.125 NOM.

FULL R

• P_G= 14 dB min. at 150 W/30 MHz

• IMD₃= 100 dBc max. at 150 W^(PEP)

• Omnigold™ Metalization System

• Common Emitter configuration

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

I_C

10 A

110 V

.220 / 5.59

.230 / 5.84

.125 / 3.18

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.245 / 6.22

.255 / 6.48

.720 / 18.28

.7.30 / 18.54

55 V

.970 / 24.64

.495 / 12.57

.003 / 0.08

.090 / 2.29

.150 / 3.81

.980 / 24.89

.505 / 12.83

.007 / 0.18

.110 / 2.79

.175 / 4.45

.280 / 7.11

1.050 / 26.67

4.0 V

233 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.75 °C/W

.980 / 24.89

T_STG

θ_JC

ORDER CODE: ASI10612

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 100 mA

I_E= 10 mA

110

BV_CES

BV_CEO

BV_EBO

I_CEO

4.0

_CE= 30 V

_CE= 60 V

_CE= 6 V

---

I_CES

h_FE

I_C= 1.4 A

43.5

C_ob

V_CB= 50 V

f = 1.0 MHz

220

G_P

_CE= 50 V

I_CQ=100 mA

P_OUT= 150 W(PEP)

f₂= 30.001 MHz

-30

IMD₃

η_C

dBc

f₁= 30.000 MHz

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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