RoHS
HER601G THRU HER608G
COMPLIANT
High Efficient Rectifier
Features
● High efficiency
● High current capability
● High Reliability
● High surge current capability
● Glass passivated chip junction
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Mechanical Data
● Package: R-6
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
●
Color band denotes cathode end
Polarity:
(Ta=25℃ Unless otherwise specified)
■Maximum Ratings
HER601 HER602 HER603 HER604 HER605 HER606 HER607 HER608
PARAMETER
SYMBOL UNIT
G
G
G
G
G
G
G
G
HER601 HER602 HER603 HER604 HER605 HER606 HER607 HER608
Device marking code
G
G
G
G
G
G
G
G
V
V
V
V
V
50
100
200
300
400
600
800
1000
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
RRM
RMS
35
50
70
140
200
210
300
280
400
420
600
560
800
700
V
100
1000
Maximum DC blocking Voltage
DC
Average Forward Current
@60Hz sine wave, Resistance load, Ta=65℃
IF(AV)
A
6.0
200
400
166
83
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃
IFSM
A
Forward Surge Current (Non-repetitive)
@1ms, square wave, 1 cycle, Tj=25℃
Current squared time
@1ms≤t8.3≤ms Tj=25℃,Rating of per diode
A2s
pF
I2t
Cj
Typical junction capacitance
@Measured at 1MHz and Applied Reverse
Voltage of 4.0 V.D.C
150
81
T
-55 ~ +150
-55 ~ +150
Storage Temperature
Junction Temperature
stg
℃
℃
T
j
(T =25℃ Unless otherwise specified)
■Electrical Characteristics
a
HER601 HER602 HER603 HER604 HER605 HER606 HER607 HER608
PARAMETER
SYMBOL
UNIT TEST CONDITIONS
G
G
G
G
G
G
G
G
Maximum instantaneous
forward voltage drop per diode
V
F
I
=6.0A
V
1.0
1.3
1.7
FM
T =25℃
Maximum DC reverse current at
rated DC blocking voltage per
diode
2.5
j
I
μA
ns
R
150
T =125℃
j
IF=0.5A,IR=1.0A,
Irr=0.25A
Maximum reverse recovery time
trr
50
75
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-A100
Rev. 2.2, 30-Jan-21
www.21yangjie.com