Datasheet > HER606G

HER606G

更新时间： 2024-11-12 14:51:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1286K
描述
DO-27

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中文翻译

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数据手册

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HER606G 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CCOO..,, LLTTDD

DO-27 Plastic-Encapsulate Diodes

High Efficient Rectifier Diodes

HER601G THRU HER608G

Features

● I_F(AV)

6.0A

DO-27

● VRRM

50V-1000V

● High surge current capability

●

Polarity: Color band denotes cathode

Applications

● Rectifier

Marking

● HER60XG

X From 1To 8

Limiting Values(Absolute Maximum Rating)

HER60

1G 2G 3G 4G 5G 6G 7G 8G

Item

Symbol Unit

Test Conditions

V_RRM

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

50 100

300 400 600 800 1000

200

RMS

35 70 140 210 280 420 560 700

60Hz Half-sine wave，

Resistance load，Ta=50℃

Average Forward Current

I_F(AV)

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

200

I_FSM

Operation Junction and

Storage Temperature Range

T_J,T_STG

-55 ~ +150

℃

Electrical Characteristics (T=25℃ Unless otherwise specified）

HER60

Symbol

Unit

Test Condition

Item

1G 2G 3G 4G 5G 6G 7G 8G

V_F

I_F=6.0A

Peak Forward Voltage

1.0

1.3

1.7

I_RRM1

I_RRM2

T =25℃

Peak Reverse Current

μA

V_RM=V_RRM

150

T =125℃

Ma ximum reverse

recovery time

I_F=0.5A,I_R=1.0A,I =0.25A

Between junction and ambient

R_θ

J-A

Thermal

Resistance(Typical)

℃/

R_θ

Between junction and lead

100

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm) copper

pad areas

www.jscj-elec.com

Rev. - 1.1

12 3 4

中文翻译

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