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HER601G PDF预览

HER601G

更新时间: 2024-11-28 14:51:19
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1286K
描述
DO-27

HER601G 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CCOO..,, LLTTDD  
27 Plastic-Encapsulate Diodes  
High Efficient Rectifier Diodes  
HER601G THRU HER608G  
Features  
IF(AV)  
6.0A  
DO-27  
VRRM  
50V-1000V  
High surge current capability  
Polarity: Color band denotes cathode  
Applications  
Rectifier  
Marking  
HER60XG  
:
X From 1To 8  
Limiting Values(Absolute Maximum Rating)  
HER60  
1G 2G 3G 4G 5G 6G 7G 8G  
Item  
Symbol Unit  
Test Conditions  
VRRM  
V
V
Repetitive Peak Reverse Voltage  
MaximumRMS Voltage  
50 100  
300 400 600 800 1000  
200  
V
RMS  
35 70 140 210 280 420 560 700  
60Hz Half-sine wave  
Resistance loadTa=50℃  
Average Forward Current  
6
IF(AV)  
A
A
Surge(Non-repetitive)Forward  
Current  
60Hz Half-sine wave,  
1 cycleTa=25℃  
200  
IFSM  
Operation Junction and  
Storage Temperature Range  
TJ,TSTG  
-55 ~ +150  
Electrical Characteristics (T=25Unless otherwise specified  
HER60  
Symbol  
Unit  
Test Condition  
Item  
1G 2G 3G 4G 5G 6G 7G 8G  
VF  
IF=6.0A  
Peak Forward Voltage  
V
1.0  
1.3  
1.7  
IRRM1  
IRRM2  
5
T =25  
a
Peak Reverse Current  
μA  
VRM=VRRM  
150  
T =125  
a
Ma ximum reverse  
recovery time  
t
rr  
IF=0.5A,IR=1.0A,I =0.25A  
rr  
ns  
75  
50  
Between junction and ambient  
Rθ  
20  
J-A  
Thermal  
Resistance(Typical)  
/  
W
65  
Rθ  
Between junction and lead  
100  
J-L  
Notes:  
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm) copper  
pad areas  
www.jscj-elec.com  
1
Rev. - 1.1  

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