HER505P(G)

更新时间： 2024-09-30 13:08:19

品牌	Logo	应用领域
鲁光 - LGE		整流二极管高效整流二极管
页数	文件大小	规格书
2页	190K
描述
暂无描述

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HER505P(G) 技术参数

Case Style：	DO-27	Maximum average forward rectified current：	3
Maximum recurrent peak reverse voltage：	400	Peak forward surge current：	200
Maximum instantaneous forward voltage：	1.0	Maximum reverse current：	10
TRR(nS)：	50	class：	Diodes

HER505P(G) 数据手册

HER501-HER508

5.0 AMP. High Efficient Rectifiers

DO-201AD

Features

ꢀ

High efficiency, Low VF

High current capability

High reliability

High surge current capability

For use in low voltage, high frequency inventor, free

wheeling, and polarity protection application.

Mechanical Data

ꢀ

Cases: Molded plastic

Epoxy: UL 94V0 rate flame retardant

ꢀ

Polarity: Color band denotes cathode

High temperature soldering guaranteed:

260 C/10 seconds/.375”,(9.5mm) lead

Dimensions in inches and (millimeters)

lengths at 5 lbs., (2.3kg) tension

ꢀ

Weight: 1.2 grams

Maximum Rating and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

HER HER HER HER HER HER HER HER

Symbol

Type Number

Units

501 502 503 504 505 506 507 508

50 100 200 300 400 600 800 1000

35 70 140 210 280 420 560 700

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMD

V_DC

Maximum DC Blocking Voltage

50 100 200 300 400 600 800 1000

Maximum Average Forward Rectified

Current .375 (9.5mm) lead length

I_(AV)

5.0

@T_A= 55 C

Peak Forward Surge Current, 8.3 ms single

half sine-wave superimposed on rated load

(JEDEC method )

I_FSM

200

Maximum Instantaneous Forward Voltage

@5.0A

1.0

1.3

1.7

Maximum DC Reverse Current

@Ta=25 C at Rated DC Blocking Voltage

@ Ta=125 C

250

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Typical Thermal Resistance

Trr

100

R_θJA

T_J

C/W

Operating Temperature Range

-65 to +150

Storage Temperature Range

STG

1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1 MHz and applied reverse voltage of 4.0 V D.

3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.

Notes:

http://www.luguang.cn

mail:lge@luguang.cn

中文翻译

下载PDF

与HER505P(G)相关器件

型号	品牌	获取价格	描述	数据表
HER505P-T	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, DO-201AD, PLASTIC, DO-201AD
HER505R	RECTRON	获取价格	Diode,
HER505-T/B	FRONTIER	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, Silicon,
HER505-T3	WTE	获取价格	5.0A ULTRAFAST DIODE
HER505-TB	WTE	获取价格	5.0A ULTRAFAST DIODE
HER505-TB-LF	WTE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P
HER505-TP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P
HER505-TP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, DO-201AD,
HER505U21	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, DO-201AD,
HER505U22	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, DO-201AD,

与HER505P(G)相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

31
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

27
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

26
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

37

产品中心

服务支持

精选活动

关于我们

帮助中心

HER505P(G)

HER505P(G) 技术参数

HER505P(G) 数据手册

与HER505P(G)相关器件

与HER505P(G)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

HER505P(G)

HER505P(G) 技术参数

HER505P(G) 数据手册

与HER505P(G)相关器件

与HER505P(G)相关文章

您还可以找

您在本页遇到什么问题？