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HER505 PDF预览

HER505

更新时间: 2024-11-05 05:35:47
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2页 848K
描述
HIGH EFFICIENT SILICON RECTIFIER

HER505 数据手册

 浏览型号HER505的Datasheet PDF文件第2页 
HER501 THRU HER508  
HIGH EFFICIENT SILICON RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 5.0 Ampere  
FEATURES  
DO-201AD  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Ultra fast switching for high efficiency  
Low reverse leakage  
1.0 (25.4)  
MIN.  
High forward surge current capability  
High temperature soldering guaranteed:  
0.220(5.6)  
0.197(5.0)  
DIA.  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.375(9.5)  
0.285(7.2)  
MECHANICAL DATA  
Case: JEDEC DO-201AD molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
1.0 (25.4)  
MIN.  
0.052(1.3)  
0.048(1.2)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.04 ounce, 1.10 grams  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
HER  
501  
HER  
502  
HER  
503  
HER  
504  
HER  
505  
HER  
506  
HER  
507  
HER  
508  
Characteristic  
Symbol  
Unit  
RRM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RWM  
50  
35  
100  
70  
200  
140  
300  
210  
400  
280  
600  
420  
800  
560  
1000  
700  
V
R
V
R(RMS)  
RMS Reverse Voltage  
V
V
A
Average Rectified Output Current  
(Note 1)  
O
I
5.0  
@TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
FSM  
I
150  
A
FM  
Forward Voltage  
@IF = 5.0A  
V
1.0  
1.3  
1.7  
V
Peak Reverse Current  
@TA = 25°C  
10  
100  
RM  
I
µA  
At Rated DC Blocking Voltage @TA = 100°C  
Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
rr  
t
50  
75  
75  
50  
nS  
pF  
°C  
°C  
j
C
j
T
-65 to +150  
-65 to +150  
STG  
T
Storage Temperature Range  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  

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