Datasheet > HER303GPT

HER303GPT

更新时间： 2024-11-09 05:35:47

品牌	Logo	应用领域
力勤 - CHENMKO		功效
页数	文件大小	规格书
2页	90K
描述
HIGH EFFICIENCY RECTIFIER

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中文翻译

获取价格

数据手册

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HER303GPT 数据手册

HER301GPT

THRU

CHENMKO ENTERPRISE CO.,LTD

GLASS PASSIVATED

HIGH EFFICIENCY RECTIFIER

VOLTAGE RANGE 50 - 1000 Volts CURRENT 3.0 Amperes

HER308GPT

FEATURES

* Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

* Low power loss, high efficiency

* Low leakage

* High current capability

* High speed switching

DO-201AD

* High current surge

* High reliability

* Glass passivated junction

* High temperature soldering guaranteed :

260^oC/10 seconds at terminals

0.052(1.3)

DIA.

0.048(1.2)

1.0(25.4)

MIN.

MECHANICAL DATA

Case: JEDEC DO-201AD molded plastic

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Indicated by cathode band

Weight: 1.20 grams

0.375(9.5)

0.335(8.5)

0.220(5.6)

DIA.

0.197(5.0)

1.0(25.4)

MIN.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 HZ, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

DO-201AD

MAXIMUM RATINGES ( At TA = 25^oC unless otherwise noted )

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

SYMBOL

VRRM

HER301GPT HER302GPT HER303GPT HER304GPT HER305GPT HER306GPT HER307GPT HER308GPT UNITS

100

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

700

Volts

VRMS

Maximum DC Blocking Voltage

VDC

100

1000

Maximum Average Forward Rectified Current at TA = 50^oC

3.0

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

IFSM

200

150

Typical Junction Capacitance (Note 1)

^oC

Operating and Storage Temperature Range

TJ, TSTG

-65 to +175

ELECTRICAL CHARACTERISTICS ( At TA = 25^oC unless otherwise noted )

HER301GPT HER302GPT HER303GPT HER304GPT HER305GPT HER306GPT HER307GPT HER308GPT

CHARACTERISTICS

SYMBOL

UNITS

Volts

Maximum Instantaneous Forward Voltage at 3.0 A DC

1.0

1.3

1.50

1.70

Maximum DC Reverse Current

uAmps

at Rated DC Blocking Voltage at TA = 25^oC

Maximum Full Load Reverse Current Average,

150

Full Cycle 0.375" (9.5mm) lead length at TL = 55^oC

Maximum Reverse Recovery Time (Note 2)

trr

nSec

2001-6

NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 4.0 volts

2. Test Conditions : IF = 0.5 A, IR = -1.0 A, IRR = -0.25 A

中文翻译

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与HER303GPT相关器件

型号	品牌	获取价格	描述	数据表
HER303GR	SECOS	获取价格	Voltage 50 ~ 1000 V 3Amp Glass Passivated High Efficiency Rectifiers
HER303G-T	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
HER303GT-G	COMCHIP	获取价格	High Efficiency Rectifiers
HER303G-TP	MCC	获取价格	暂无描述
HER303G-TP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
HER303H32	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
HER303H32-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
HER303H33	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
HER303H34	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,
HER303H35	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,

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