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HER302G PDF预览

HER302G

更新时间: 2024-12-02 15:18:31
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 212K
描述
DO-201AD

HER302G 数据手册

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RoHS  
HER301G THRU HER308G  
COMPLIANT  
High Efficient Rectifier  
Features  
● High efficiency  
● High current capability  
● High Reliability  
● High surge current capability  
● Glass passivated chip junction  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Mechanical Data  
Package: DO-201AD(DO-27)  
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per J-STD-  
002 and JESD22-B102  
Color band denotes cathode end  
Polarity:  
(Ta=25Unless otherwise specified)  
■Maximum Ratings  
HER301 HER302 HER303 HER304 HER305 HER306 HER307 HER308  
PARAMETER  
SYMBOL UNIT  
G
G
G
G
G
G
G
G
HER301 HER302 HER303 HER304 HER305 HER306 HER307 HER308  
Device marking code  
G
G
G
G
G
G
G
G
VRRM  
VRMS  
VDC  
V
V
V
50  
100  
200  
300  
400  
600  
800  
1000  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
35  
50  
70  
140  
200  
210  
300  
280  
400  
420  
600  
560  
800  
700  
100  
1000  
Maximum DC blocking Voltage  
Average Forward Current  
@60Hz sine wave, Resistance load, Ta=50℃  
IF(AV)  
A
3.0  
125  
250  
65  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
A
I
FSM  
Forward Surge Current (Non-repetitive)  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1ms≤t8.3≤ms Tj=25℃,Rating of per diode  
A2s  
pF  
I2t  
Cj  
Typical junction capacitance  
@Measured at 1MHz and Applied Reverse  
Voltage of 4.0 V.D.C  
65  
43  
35  
T
-55 ~ +150  
-55 ~ +150  
Storage Temperature  
Junction Temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
HER301 HER302 HER303 HER304 HER305 HER306 HER307 HER308  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
G
G
G
G
G
G
G
G
Maximum instantaneous  
forward voltage drop per diode  
V
F
I
=3.0A  
V
1.0  
1.3  
1.7  
FM  
T =25  
2.5  
Maximum DC reverse current at  
rated DC blocking voltage per  
diode  
j
I
μA  
ns  
R
100  
T =125℃  
j
IF=0.5A,IR=1.0A,  
Irr=0.25A  
Maximum reverse recovery time  
50  
75  
trr  
1 / 4  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-A096  
Rev. 2.2, 30-Jan-21  
www.21yangjie.com  

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