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HER1608N PDF预览

HER1608N

更新时间: 2024-11-06 12:57:43
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 816K
描述
16Ampere Heat Sink Dual Common Anode High Efficiency Rectifiers

HER1608N 数据手册

 浏览型号HER1608N的Datasheet PDF文件第2页 
UGF1004GD thru UGF1008GD  
UGF1004GD/UGF1005GD/UGF1006GD/UGF1007GD/UGF1008GD  
Pb Free Plating Product  
10.0 Amperes Insulated Package Dual Doubler Polarity Ultra Fast Recovery Rectifiers  
Unit : inch (mm)  
ITO-220AB/TO-220F-3L  
Features  
Ultra fast soft recovery switching for high efficiency  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
Car Audio Amplifiers and Sound Device Systems  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case: ITO-220AB full plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 1.75 gram approximately  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "GD" Suffix "GS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "G" Suffix "GA"  
Positive  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
UNIT  
UGF1004GD UGF1005GD UGF1006GD UGF1007GD UGF1008GD  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
300  
210  
300  
400  
280  
400  
10  
500  
350  
500  
600  
420  
600  
V
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified current  
IF(AV)  
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
VF  
IR  
70  
A
V
Maximum instantaneous forward voltage (Note 1)  
IF= 5 A  
0.95  
1.25  
1.70  
25  
TJ=25°C  
Maximum reverse current @ rated VR  
TJ=125°C  
10  
μA  
100  
Maximum reverse recovery time (Note 2)  
Typical thermal resistance  
trr  
20  
ns  
°C/W  
°C  
RθJC  
TJ  
6.0  
Operating junction temperature range  
Storage temperature range  
- 55 to +175  
- 55 to +175  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle  
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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