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HER151 PDF预览

HER151

更新时间: 2024-10-30 14:53:55
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4页 41K
描述
Axial

HER151 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-15
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.09其他特性:HIGH RELIABILITY
应用:ULTRA FAST RECOVERY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
JESD-609代码:e0最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:-65 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:50 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

HER151 数据手册

 浏览型号HER151的Datasheet PDF文件第2页浏览型号HER151的Datasheet PDF文件第3页浏览型号HER151的Datasheet PDF文件第4页 
®
HER151 – HER158  
1.5A ULTRAFAST DIODE  
WON-TOP ELECTRONICS  
Features  
Diffused Junction  
Low Forward Voltage Drop  
High Surge Current Capability  
High Reliability  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
A
B
A
Mechanical Data  
C
Case: DO-15, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.40 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
D
DO-15  
Dim  
A
Min  
25.4  
5.50  
0.71  
2.60  
Max  
B
7.62  
0.864  
3.60  
C
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
HER HER HER HER HER HER HER HER  
Characteristic  
Symbol  
Unit  
151  
152  
153  
154  
155  
156  
157  
158  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
100  
200  
300  
400  
600  
800 1000  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
70  
140  
210  
280  
420  
560  
1.7  
700  
V
A
Average Rectified Output Current (Note 1) @TA = 50°C  
1.5  
50  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
A
Forward Voltage  
@IF = 1.5A  
VFM  
IRM  
1.0  
1.3  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
5.0  
µA  
100  
Reverse Recovery Time (Note 2)  
trr  
50  
35  
75  
20  
nS  
pF  
Typical Junction Capacitance (Note 3)  
CJ  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Typical Thermal Resistance Junction to Lead (Note 1)  
RθJA  
RθJL  
45  
15  
°C/W  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-65 to +125  
-65 to +150  
°C  
°C  
TSTG  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
3. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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