RoHS
HER101G THRU HER108G
COMPLIANT
High Efficient Rectifier
Features
● High efficiency
● High current capability
● High Reliability
● High surge current capability
● Glass passivated chip junction
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Mechanical Data
● Package: DO-204AL(DO-41)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
●
Color band denotes cathode end
Polarity:
(Ta=25℃ Unless otherwise specified)
■Maximum Ratings
HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108
PARAMETER
SYMBOL UNIT
G
G
G
G
G
G
G
G
HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108
Device marking code
G
G
G
G
G
G
G
G
V
V
V
V
V
A
50
100
200
300
400
600
800
1000
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
RRM
RMS
35
50
70
140
200
210
300
280
400
420
600
560
800
700
V
100
1000
Maximum DC blocking Voltage
DC
Average Forward Current
@60Hz sine wave, Resistance load, Ta=75℃
IF(AV)
1.0
30
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃
Forward Surge Current (Non-repetitive)
IFSM
A
60
@1ms, square wave, 1 cycle, Tj=25℃
Current squared time
@1ms≤t8.3≤ms Tj=25℃,Rating of per diode
Typical junction capacitance
@Measured at 1MHz and Applied Reverse
Voltage of 4.0 V.D.C
A2s
pF
I2t
Cj
3.735
15
13
8
T
-55 ~ +150
-55 ~ +150
Storage Temperature
Junction Temperature
stg
℃
℃
T
j
(T =25℃ Unless otherwise specified)
■Electrical Characteristics
a
HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108
PARAMETER
SYMBOL
UNIT TEST CONDITIONS
G
G
G
G
G
G
G
G
Maximum instantaneous
forward voltage drop per diode
V
F
I
=1.0A
V
1.0
1.3
1.7
FM
T =25℃
2.5
Maximum DC reverse current at
rated DC blocking voltage per
diode
j
I
μA
ns
R
100
T =125℃
j
IF=0.5A,IR=1.0A,
Irr=0.25A
Maximum reverse recovery time
50
75
trr
1 / 4
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-A088
Rev. 2.2, 30-Jan-21
www.21yangjie.com