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HER103(G) PDF预览

HER103(G)

更新时间: 2023-12-06 20:00:29
品牌 Logo 应用领域
鲁光 - LGE 整流二极管高效整流二极管
页数 文件大小 规格书
2页 1057K
描述
高效整流二极管

HER103(G) 数据手册

 浏览型号HER103(G)的Datasheet PDF文件第2页 
HER101G-HER108G  
1.0AMP. Glass Passivated High Efficient Rectifiers  
DO-41  
Features  
Glass passivated chip junction.  
High efficiency, Low VF  
High current capability  
High reliability  
High surge current capability  
For use in low voltage, high frequency inventor, free  
wheeling, and polarity protection application.  
Mechanical Data  
Case: Molded plastic DO-41  
Epoxy: UL 94V0 rate flame retardant  
Polarity: Color band denotes cathode  
High temperature soldering guaranteed:  
o
260 C/10 seconds/.375”,(9.5mm) lead  
Dimensions in inches and (millimeters)  
lengths at 5 lbs., (2.3kg) tension  
Weight: 0.35 gram  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
HER HER HER HER  
HER HER HER HER  
Symbol  
Type Number  
Units  
105G 106G 107G 108G  
101G 102G 103G 104G  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100 200 300 400 600 800 1000  
70 140 210 280 420 560 700  
100 200 300 400 600 800 1000  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current .375 (9.5mm) Lead Length  
o
I(AV)  
1.0  
30  
A
@TA = 55 C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
IFSM  
A
V
Maximum Instantaneous Forward Voltage  
@ 1.0A  
VF  
1.0  
1.3  
1.7  
Maximum DC Reverse Current  
o
@TA=25 C at Rated DC Blocking Voltage  
o
IR  
5.0  
uA  
uA  
@ TA=125 C  
150  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Typical thermal resistance  
Trr  
Cj  
50  
15  
75  
10  
nS  
pF  
RθJA  
70  
15  
o
C/W  
R
θJC  
o
TJ  
Operating Temperature Range  
Storage Temperature Range  
-65 to +150  
-65 to +150  
C
o
TSTG  
C
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.  
Notes:  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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