Datasheet > HER102G-K

HER102G-K

更新时间： 2024-09-25 02:49:19

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
7页	412K
描述
1A, 50V - 1000V Glass Passivated High Efficient Rectifier

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中文翻译

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数据手册

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HER102G-K 数据手册

HER101G-K - HER108G-K

Taiwan Semiconductor

1A, 50V - 1000V Glass Passivated High Efficient Rectifier

FEATURES

KEY PARAMETERS

● Glass passivated chip junction

● High current capability, Low V_F

● High reliability

PARAMETER

I_F(AV)

V_RRM

VALUE

UNIT

50 - 1000

● High surge current capability

I_FSM

● Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

T_{J MAX}

150

°C

Package

Configuration

DO-204AL (DO-41)

Single die

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● TV

● Monitor

MECHANICAL DATA

● Case: DO-204AL (DO-41)

● Molding compound meets UL 94V-0 flammability rating

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Pure tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: As marked

● Weight: 0.33 g (approximately)

DO-204AL (DO-41)

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

HER

101

G-K

HER

102

G-K

HER

103

G-K

HER

104

G-K

HER

105

G-K

HER

106

G-K

HER

107

G-K

HER

108

G-K

PARAMETER

SYMBOL

UNIT

HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108

Marking code on the device

Repetitive peak reverse

voltage

V_RRM

100

200

300

400

600

800

1000

Reverse voltage, total rms

value

V_R(RMS)

I_F(AV)

140

210

280

420

560

700

Forward current

Surge peak forward current,

8.3 ms single half sine-wave

superimposed on rated load

per diode

I_FSM

Junction temperature

Storage temperature

T_J

- 55 to +150

°C

T_STG

Version:A1703

12 3 4 5 6 7

中文翻译

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