Datasheet > HEP42C

HEP42C

更新时间： 2024-11-12 05:35:43

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	65K
描述
PNP SILICON TRANSISTOR

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中文翻译

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数据手册

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HEP42C 数据手册

PNP S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HEP42C

█ APPLICATIONS

Medium Power Linear Switching Application.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-220AB

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation（T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 65W

P_C— — Collector Dissipation（T_A=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 2W

1―Base，B

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -100V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -100V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -6A

I_B— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -2A

2―Collector，C

3― Emitter，E

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCEO Collector-Emitter Breakdown Voltage

I_C=-30mA, I =0

-100

ICEO

IEBO

ICES

Collector Cut-off Current

Emitter Cut-off Current

V_CE=-60V, I_B=0

-0.7 mA

-1 mA

V_EB=-5V, I_C=0

Collector Cut-off Current

V_CE=-100V, V_EB=0

V_CE=-4V, I_C=-0.3A

V_CE=-4V, I_C=-3A

I_C=-6A, I_B=-600mA

-400 μA

HFE（1） DC Current Gain

HFE（2） DC Current Gain

100

VCE(sat) Collector- Emitter Saturation Voltage

VBE(on) Base-Emitter On Voltage

-1.5 V

-2.0 V

V_CE=-4V, I_C=-6A

V_CE=-10V, I_C=-500mA,

f=1MHz

Current Gain-Bandwidth Product

3.0

MHz

█ hFE（2） Classification

15— 75

70— 100

中文翻译

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