Datasheet > HEMT-1001

HEMT-1001

更新时间： 2024-01-31 04:34:10

品牌	Logo	应用领域
惠普 - HP		光电
页数	文件大小	规格书
4页	191K
描述
940 nm High Radiant Emitters

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中文翻译

获取价格

技术参数
数据手册

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HEMT-1001 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	HTS代码：	8541.40.20.00
风险等级：	5.14	Is Samacsys：	N
配置：	SINGLE	最大正向电流：	0.1 A
JESD-609代码：	e0	功能数量：	1
最高工作温度：	100 °C	最低工作温度：	-55 °C
光电设备类型：	INFRARED LED	峰值波长：	940 nm
形状：	ROUND	尺寸：	2.925 mm
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

HEMT-1001 数据手册

940 nm High Radiant Emitters

Technical Data

HEMT-3301

HEMT-1001

Features

• Nonsaturating, High Radiant

Flux Output

• Efficient at Low Currents,

Combined with High

Current Capability

• Three Package Styles

• Operating Temperature

Range -55°C to +100°C

• Medium-Wide Radiation

Patterns

Description

medium-wide and wide radiation

patterns eliminate the beam

focusing problems that are

encountered with emitters that

have narrow radiation patterns.

Applications include optical

transducers, optical part

counters, smoke detectors, covert

identification, paper tape and

card readers, and optical

encoders.

The HEMT-3301 and HEMT-1001

are infrared emitters, using a

mesa structure GaAs on GaAs

infrared diode, IRED, optimized

for maximum quantum efficiency

at a peak wavelength of 940 nm.

The HEMT-3301 and HEMT-1001

emitters are untinted, undiffused

plastic packages with medium-

wide radiation patterns. These

• Radiated Spectrum Matches

Response of Silicon

Photodetectors

Package Dimensions

12 3 4

中文翻译

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