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HEF4043BT-Q100 PDF预览

HEF4043BT-Q100

更新时间: 2024-09-24 01:22:43
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路触发器
页数 文件大小 规格书
14页 685K
描述
Quad R/S latch with 3-state outputs

HEF4043BT-Q100 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP-16Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.68
系列:4000/14000/40000JESD-30 代码:R-PDSO-G16
JESD-609代码:e4长度:9.9 mm
逻辑集成电路类型:R-S LATCH湿度敏感等级:1
位数:4功能数量:1
端子数量:16最高工作温度:85 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
传播延迟(tpd):180 ns筛选级别:AEC-Q100
座面最大高度:1.75 mm最大供电电压 (Vsup):15 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
触发器类型:HIGH LEVEL宽度:3.9 mm

HEF4043BT-Q100 数据手册

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HEF4043B-Q100  
Quad R/S latch with 3-state outputs  
Rev. 1 — 15 July 2013  
Product data sheet  
1. General description  
The HEF4043B-Q100 is a quad R/S latch with 3-state outputs with a common output  
enable input (OE). Each latch has an active HIGH set input (1S to 4S), an active HIGH  
reset input (1R to 4R) and an active HIGH 3-state output (1Q to 4Q).  
The nR and nS inputs determine the latch output (nQ) when OE is HIGH (see Table 3).  
When OE is LOW, the latch outputs are in the high impedance OFF-state. OE does not  
affect the state of the latch. The high impedance off-state feature allows common bussing  
of the outputs.  
It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS  
(usually ground). Unused inputs must be connected to VDD, VSS, or another input.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 3) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 3)  
Specified from 40 C to +85 C  
Fully static operation  
5 V, 10 V, and 15 V parametric ratings  
Standardized symmetrical output characteristics  
ESD protection:  
MIL-STD-833, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  
Complies with JEDEC standard JESD 13-B  
3. Applications  
Four-bit storage with output enable  

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