Datasheet > HED880

HED880

更新时间： 2024-11-04 05:35:39

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	77K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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HED880 数据手册

N PN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HED880

█ APPLICATIONS

Low FrequencyPowerAmplifier.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-220AB

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation（T_c=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 30W

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 7V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 3A

Ib— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 0.3A

1―Base，B

2―Collector，C

3―Emitter, E

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

BVCEO Collector-Emitter Breakdown Voltage

100 μA

300

I_C=50mA, I =0

ICBO

IEBO

Collector Cut-off Current

V_CB=60V, I_E=0

Emitter Cut-off Current

V_EB=7V, I_C=0

HFE（1） DC Current Gain

V_CE=5V, I_C=0.5A

V_CE=5V, I_C=3A

I_C=3A, I_B=0.3A

V_CE=5V, I_C=0.5A

V_CE=5V, I_C=0.5A,

HFE（2） DC Current Gain

VCE(sat) Collector- Emitter Saturation Voltage

VBE(on) Base-Emitter On Voltage

0.4 1

0.7 1

Current Gain-Bandwidth Product

Output Capacitance

Turn-On Time

MHz

Cob

tON

tSTG

pF V_CB=10V, I_E=0，f=1MHz

0.8

1.5

0.8

μS

I_B1= -I_B2=0.2A

V_CC=30V

Storage Time

μS

Fall Time

μS

█ hFE Classification

60— 120

100— 200

150— 300

中文翻译

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