Spec. No. : HE6101
Issued Date : 1992.08.25
Revised Date : 2002.02.18
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HE9015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE9015 is designed for use in pre-amplifier of low level and low
noise.
TO-92
Features
• High Total Power Dissipation (PD: 450mW)
• Complementary to HE9014
• High hFE and Good Linearity
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 450 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -45 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-50V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
-50
-45
-5
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
V
-50
-50
-0.7
-1
-0.75
600
7
IEBO
VEB=-5V, IC=0
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
-0.20
-0.82
-0.65
200
4.5
190
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-1mA
VCB=-10V, f=1MHz, IE=0
VCE=-5V, IC=-10mA
-
V
V
-0.6
100
-
Cob
fT
pF
MHz
100
-
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification on hFE1
Rank
B
C
Range
100-300
200-600
HE9015
HSMC Product Specification