Spec. No. : HE6102
Issued Date : 1992.08.25
Revised Date : 2002.04.10
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HE9014
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE9014 is designed for use in pre-amplifier of low level and low
noise.
TO-92
Features
• High Total Power Dissipation (PD: 450mW)
• Complementary to HE9015
• High hFE and Good Linearity
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 450 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 50 V
VCEO Collector to Emitter Voltage...................................................................................... 45 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
50
45
5
-
-
-
-
0.58
100
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
V
50
50
0.3
1
0.7
1000
3.5
-
IEBO
VEB=5V, IC=0
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
0.14
0.84
0.63
280
2.20
270
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCB=10V, f=1MHz, IE=0
VCE=5V, IC=10mA
V
V
Cob
fT
pF
MHz
150
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification on hFE
Rank
B
C
D
Range
100-300
200-600
400-1000
HE9014
HSMC Product Specification