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HE9014

更新时间: 2024-11-03 22:33:23
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
4页 46K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

HE9014 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:NBase Number Matches:1

HE9014 数据手册

 浏览型号HE9014的Datasheet PDF文件第2页浏览型号HE9014的Datasheet PDF文件第3页浏览型号HE9014的Datasheet PDF文件第4页 
Spec. No. : HE6102  
Issued Date : 1992.08.25  
Revised Date : 2002.04.10  
Page No. : 1/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HE9014  
NPN EPITAXIAL PLANAR TRANSISTOR  
Description  
The HE9014 is designed for use in pre-amplifier of low level and low  
noise.  
TO-92  
Features  
High Total Power Dissipation (PD: 450mW)  
Complementary to HE9015  
High hFE and Good Linearity  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature.................................................................................... +150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C)................................................................................ 450 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage ......................................................................................... 50 V  
VCEO Collector to Emitter Voltage...................................................................................... 45 V  
VEBO Emitter to Base Voltage.............................................................................................. 5 V  
IC Collector Current........................................................................................................ 100 mA  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=100uA, IE=0  
IC=1mA, IB=0  
IE=100uA, IC=0  
VCB=50V, IE=0  
BVCBO  
BVCEO  
BVEBO  
ICBO  
50  
45  
5
-
-
-
-
0.58  
100  
-
-
-
-
-
-
-
-
-
V
V
V
nA  
nA  
V
50  
50  
0.3  
1
0.7  
1000  
3.5  
-
IEBO  
VEB=5V, IC=0  
*VCE(sat)  
*VBE(sat)  
VBE(on)  
*hFE  
0.14  
0.84  
0.63  
280  
2.20  
270  
IC=100mA, IB=5mA  
IC=100mA, IB=5mA  
VCE=5V, IC=2mA  
VCE=5V, IC=1mA  
VCB=10V, f=1MHz, IE=0  
VCE=5V, IC=10mA  
V
V
Cob  
fT  
pF  
MHz  
150  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
Classification on hFE  
Rank  
B
C
D
Range  
100-300  
200-600  
400-1000  
HE9014  
HSMC Product Specification  

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