Datasheet > HE9013

HE9013

更新时间： 2024-01-29 03:46:11

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	43K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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技术参数
数据手册

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HE9013 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.5 A	配置：	Single
最小直流电流增益 (hFE)：	144	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

HE9013 数据手册

Spec. No. : HE6104

Issued Date : 1992.09.09

Revised Date : 2002.03.06

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HE9013

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HE9013 is designed for use in 1W output amplifier of portable radios in

class B push-pull operation.

Features

TO-92

• High Total Power Dissipation (PT: 625mW)

• High Collector Current (IC: 500mA)

• Complementary to HE9012

• Excellent lnearity

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................................ +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage...................................................................................................... 40V

VCEO Collector to Emitter Voltage .................................................................................................. 20V

VEBO Emitter to Base Voltage........................................................................................................... 5V

IC Collector Current.................................................................................................................... 500 mA

Icp Base Current......................................................................................................................... 100 mA

Characteristics (Ta=25°C)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=1mA, IB=0

IE=100uA, IC=0

VCE=25V, IE=0

100

0.6

1.2

0.9

300

IEBO

VEB=3V, IC=0

*VCE(sat)

*VBE(sat)

VBE(on)

*hFE1

*hFE2

Cob

IC=500mA, IB=50mA

VCE=1V, IC=10mA

VCE=1V, IC=50mA

VCE=1V, IC=500mA

VCB=10V, f=1MHz

VCE=1V, IC=10mA, f=100MHz

112

180

MHz

100

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification on hFE1

Rank

Range

112-166

144-202

176-246

214-300

HE9013

HSMC Product Specification

12 3 4

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