Datasheet > HE9012

HE9012

更新时间： 2024-11-03 22:33:23

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	43K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HE9012 数据手册

Spec. No. : HE6103

Issued Date : 1992.09.09

Revised Date : 2002.02.18

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HE9012

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HE9012 is designed for use in 1W output amplifier of portable radios in

class B push-pull operation.

Features

TO-92

• High total power dissipation (PT: 625mW)

• High collector current (IC: 500mA)

• Complementary to HE9013

• Excellent linearity

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................................ +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage.................................................................................................... -40 V

VCEO Collector to Emitter Voltage ................................................................................................ -20 V

VEBO Emitter to Base Voltage......................................................................................................... -5 V

IC Collector Current.................................................................................................................. -500 mA

IBP Base Current...................................................................................................................... -100 mA

Characteristics (Ta=25°C)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min.

-40

-20

-5

Typ.

Max.

Unit

Test Conditions

IC=-100uA, IE=0

IC=-1mA, IB=0

IE=-100uA, IC=0

VCE=-25V, IE=0

-100

-0.6

-1.2

-0.9

300

IEBO

VEB=-3V, IC=0

*VCE(sat)

*VBE(sat)

VBE(on)

*hFE1

*hFE2

Cob

IC=-500mA, IB=-50mA

VCE=-1V, IC=-10mA

VCE=-1V, IC=-50mA

VCE=-1V, IC=-500mA

VCB=-10V, f=1MHz

VCE=-1V, IC=-10mA, f=100MHz

112

180

MHz

100

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification on hFE1

Rank

Range

112-166

144-202

176-246

214-300

HE9012

HSMC Product Specification

12 3 4

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