HE8807SG

更新时间： 2024-11-10 21:54:19

品牌	Logo	应用领域
日立 - HITACHI		半导体二极管
页数	文件大小	规格书
5页	29K
描述
GaAlAs Infrared Emitting Diodes

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HE8807SG 数据手册

HE8807SG/FL

GaAlAs Infrared Emitting Diodes

Description

The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength

of 880 nm.

Features

High output, high efficiency

Narrow spectral width

Sharp radiation directivity (HE8807FL)

Wide radiation directivity (HE8807SG)

High reliability

Absolute Maximum Ratings (T_C= 25°C)

Item

Symbol

I_F

Rated Value

200

Units

Forward current

Reverse voltage

Operating temperature

Storage temperature

V_R

Topr

Tstg

–20 to +85

–40 to +100

°C

245

12 3 4 5

中文翻译

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型号	品牌	获取价格	描述	数据表
HE8807SG/FL	ETC	获取价格
HE8807SL	HITACHI	获取价格	Infrared LED, 4mm, 1-Element, 880nm
HE880A	BOWEI	获取价格	Broadband VCO
HE880B	BOWEI	获取价格	Broadband VCO
HE881	BOWEI	获取价格	Broadband VCO
HE8811	OPNEXT	获取价格	GaAlAs Infrared Emitting Diode
HE8811_06	OPNEXT	获取价格	GaAlAs Infrared Emitting Diode
HE8812SG	OPNEXT	获取价格	GaAlAs Infrared Emitting Diode
HE8812SG	HITACHI	获取价格	GaAlAs Infrared Emitting Diode
HE8813VG	HITACHI	获取价格	Infrared LED, 4mm, 1-Element, 880nm