是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-92 | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.62 | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 25 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 160 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-W3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 190 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HE8551L-D-T9N-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
HE8551L-E-T92-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
HE8551L-E-T9N-K | UTC |
获取价格 |
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, | |
HE8551L-X-T92-B | UTC |
获取价格 |
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR | |
HE8551L-X-T92-K | UTC |
获取价格 |
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR | |
HE8551L-X-T92-R | UTC |
获取价格 |
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR | |
HE8551L-X-T9N-B | UTC |
获取价格 |
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR | |
HE8551L-X-T9N-K | UTC |
获取价格 |
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR | |
HE8551L-X-T9N-R | UTC |
获取价格 |
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR | |
HE8551S | HSMC |
获取价格 |
PNP EPITAXIAL PLANAR TRANSISTOR |